Identification and characterization of single crystal Bi2Te3–Se  alloy

Požega, Emina; Ivanov, Svetlana Lj.; Stević, Zoran; Karanović, Ljiljana; Tomanec, Rudolf; Gomidželović, Lidija; Kostov, Ana

doi:10.1016/s1003-6326(15)63964-4

Cited by 17 publications

(7 citation statements)

References 18 publications

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“…The first endothermic reaction at 524.11 0 C which corresponds to begin the phases change in crystal structure. First endothermic reaction corresponding to the formation of α to β phase transition which is conformed studies by Eddik et al [20] in In2Se3, Pozega et al [14] in Bi2Te3-xSex, Sokolov et al [18] in Bi2Te3-Bi2Se3 and Lahalle et al [19] in Bi2Te2.55Se0.45. Eddik et al [20] found finite solid solutions of substitution based on the binary compounds and an incongruously melting compound with the composition InSbSe3, which undergoes a polymorphic transition at 525°C.…”

Section: Resultssupporting

confidence: 79%

“…So, material obtained liquidus temperature (617.78 0 C) in fig. 1 closed to melting temperature of β-Sb2Se3 and β-In2Se3 compound, but slightly increased, which can be contributed to the presence of Se [14]. Also confirmed the statement for first endothermic reaction as a phase change [20].…”

Section: Resultssupporting

confidence: 73%

“…The finding based on the TG curves were supported by DTG and DTA curves also, because there is dominant exothermic peak in DTA around 391 0 C and endothermic peak in DTG around 388 0 C. Further, in second stage it can be seen from the TGA curve, this In2Se2.7Sb0.3 single crystal, subjected to continued heating in the TGA apparatus, does not remain stable for long. The second stage lies in temperature range 391°C to 540°C and here instead of mass loss, small mass gain observed and mass gain in this stage nearly 0.04 mg and 0.14% in air atmosphere, leading to the formation of another intermediate product, viz, an In2Se2.7Sb0.3 single crystal gain oxygen [14]. So, its mass increases which may be due to the undergoing reaction of an intermediate product with oxygen.…”

Section: Resultsmentioning

confidence: 83%

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Thermal Decomposition and Kinetic Parameter of Bridgeman- Grown In2Se3-xSbx (x= 0.3) Single Crystals

Patel¹,

Vyas

Patel

et al. 2022

Preprint

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The thermal analysis of the vertical Bridgman-grown In2Se2.7Sb0.3 single crystals was carried out by recording the Thermogravimetric (TG), Differential Thermogravimetric (DTG) and Differential Thermal Analysis (DTA) curves. All the three thermo-curves were recorded simultaneously by thermal analyzer in the temperature range of ambient to 650 0 C in air atmosphere. The thermo-curves were recorded for single heating rates of 10 °C/min. The thermal kinetic parameters of the vertical Bridgman-grown In2Se2.7Sb0.3 single crystals were determined employing the non-mechanistic H-M (Horowitz and Metzger), P-N (Piloyan-Novikova), C-R (Coats-Redfem) and Broido relation from TGA and PRN (Piloyan, Ryabchikov and Novikova) and BD (Borchardt and Daniels) relation from DTA curves. The determined kinetic parameters support the observations of the thermo-curves.

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Section: Resultssupporting

confidence: 79%

Section: Resultssupporting

confidence: 73%

Section: Resultsmentioning

confidence: 83%

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Thermal Decomposition and Kinetic Parameter of Bridgeman- Grown In2Se3-xSbx (x= 0.3) Single Crystals

Patel¹,

Vyas

Patel

et al. 2022

Preprint

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“…Essaleh 4 , and K. Hoummada 1 2 Thermoelectric technology can be used for heat-to-electricity conversion [1]. In this case, thermoelectric devices exploit a temperature (T) gradient to produce electricity.…”

Section: Thermoelectric Power Factor Of Ge1-xsnx Thin Filmsmentioning

confidence: 99%

Thermoelectric power factor of Ge1-Sn thin films

et al. 2020

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“…Bi 2 Te 3 has useful application in the field of thermoelectric devices as solid state coolers for cooling of electronic components and in space technology for military purposes (Požega et al, 2015), like generators Bi 2 Te 3 have found application in space craft. Therefore, studies on various properties of bismuth telluride are interesting for both basic and applied research.…”

Section: Introductionmentioning

confidence: 99%

Síntesis e investigación del mono cristal BiSBTeSe dopado con Zr obtenido mediante el método de Bridgman

et al. 2017

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Single crystal ingot of BiSbTeSe doped with Zr was synthesized using Bridgman method. Energy dispersive spectrometry (EDS) analysis was used to determine chemical composition of studied samples as well as to check and confirm samples homogeneity. X-ray diffraction (XRD) measurements proved that obtained crystal ingot is a single cristal and confirms Bi 2 Te 3 -type compound with orientation (00l) of single crystal. Melting point was determined by dilatometrically measured shrinkage during heating. Mobility, concentration, resistivity/conductivity and Hall coefficient of BiSbTeSe doped with Zr samples were determined using a Hall Effect measurement system based on the Van der Pauw method. The Hall Effect was measured at room temperature with an applied magnetic field strength of 0.37 T at different current intensities. The measured ingot samples were cut and cleaved from different regions. Calculated results obtained using a Hall Effect measurement system (Ecopia, HMS-3000) were mutually compared for cleaved and cut samples. Changing of transport and electrical parameters with the increase of the current intensity was also monitored.The results confirmed that electrical and transport properties of single crystal depend on crystal growth direction and mobility was also significantly improved in comparison with theoretical value of Bi 2 Te 3 and available literature data. RESUMEN: Síntesis e investigación del mono cristal BiSBTeSe dopado con Zr obtenido mediante el método de Bridgman.El lingote del mono cristal de BiSbTeSe dopado con Zr se sintetizó utilizando el método de Bridgman. La composición química se determinó mediante análisis con espectroscopía de dispersión de energía (EDS). Mediante difracción de rayos X (DRX) se demostró que el lingote de cristal obtenido es un mono cristal y confirmó que se trata de un compuesto del tipo Bi 2 Te 3 , con orientación del mono cristal (001). El punto de fusión se determinó por medidas dilatométricas. La movilidad, concentración, resistividad/conductividad, y el coeficiente de Hall del BiSbTeSe dopado con Zr, se determinaron utilizando un sistema de medición de efecto Hall basado en el método de Van der Pauw. El efecto Hall se midió a temperatura ambiente con una intensidad de campo magnético aplicada de 0,37 T a diferentes intensidades de corriente. Las muestras de lingotes medidos se cortaron y se rompieron de diferentes regiones. Las muestras de lingotes utilizadas en las medidas fueron obtenbidas mediante corte y escisión en distintas zonas. Los resultados obtenidos utilizando un sistema de medición de efecto Hall (Ecopia, HMS-3000) en las distintas muestras, se compararon entre sí. Los resultados confirmaron que las propiedades eléctricas y de transporte del mono cristal dependen de la dirección del crecimiento del cristal. La movilidad se mejoró significativamente en comparación no solo con el valor teórico de Bi 2 Te 3 sino también con los datos existentes en la literatura.

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Identification and characterization of single crystal Bi2Te3–Se alloy

Cited by 17 publications

References 18 publications

Thermal Decomposition and Kinetic Parameter of Bridgeman- Grown In2Se3-xSbx (x= 0.3) Single Crystals

Thermal Decomposition and Kinetic Parameter of Bridgeman- Grown In2Se3-xSbx (x= 0.3) Single Crystals

Thermoelectric power factor of Ge1-Sn thin films

Síntesis e investigación del mono cristal BiSBTeSe dopado con Zr obtenido mediante el método de Bridgman

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