Identification and quantification of reaction phases at Si3N4–Ti interfaces by using analytical transmission electron microscopy techniques

Unveiling the reaction products in heat treated Si3N4-Ti joined ceramics by transmission electron microscopy

“…Similar to our former research [25], after heat treatment at 1000 ℃, we also observed nearly uniform phase structures like performed previous studies [18,19,[36][37][38][39][40]. However, it can be explained that primary microstructure was consisted of Ti 3 N 2 reaction layer with 50 nm thickness at the interface, dendritic shape Ti 2 N phase instead of Ti 3 N formation along the whole Ti interlayer and Si rich Ti x Si y N phases.…”

“…Considering the EFTEM maps, Si and N diffusion towards Ti foil side was detected. Here, effect of heat treatment on the enhancing of diffusion rate in both Si and N elements was obviously seen when compared to our former research [25]. Similar to TEM and STEM images (Fig.…”

“…To understand the nature of chemical reactions that can occur at the interfaces and to compare with the as-received samples which were produced in our previous study [25], heat treatment process was carried out at 1000 ℃. This temperature was selected since during the dry cutting process, temperature of ceramic cutting tool edge was roughly increased to 1000 ℃ due to friction.…”

“…Nevertheless, especially main joining process techniques such as diffusion bonding, active metal brazing, and liquid phase bonding generally take long time, so it can alter the properties of the ceramic [24]. However, the capacitor discharge joining (CDJ) method [24][25][26][27][28] delivers a chance to investigate the preliminary reactions and phase formations. It is because CDJ is a very speedy technique and no necessity for a special atmosphere or heating.…”

Transmission electron microscopy analysis of some transition metal compounds for energy storage and conversion

“…On the other hand, the spatial distribution of Ti and N can be well differentiated by EELS through detecting the ionization edges of Ti L-edge (485 eV) and N-K edge (401 eV). [128]. The width of the energy windows ∆E of carbon, nitrogen and titanium was set to be 10 eV.…”