Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon

Abstract

Reply to "Comment on 'Interstitial-type defects away of the projected ion range in high energy ion implanted and annealed silicon'" [Appl.Defect centers generated in crystalline silicon by MeV Si implants have been investigated by a combination of photoluminescence, variable-energy positron annihilation measurements, depth profiling by etching, annealing studies, and the dependence on impurities. The broad 935 meV photoluminescence band occurs at intrinsic interstitial complexes, the 835 meV band at small vacancy clusters, and the 1062 meV line at a low concentration of vacancy clusters which are possibly formed by aggregation of the 835 meV centers.

Localised vibrational mode spectroscopy studies of self-interstitial clusters in neutron irradiated silicon

“…53) with our 582 cm À1 band. Interestingly, four sharp PL bands 11,12 at 997.5, 981.9, 972.1, and 965.3 meV may originate from the same range of small I n clusters.…”

“…Self-interstitial clusters can be produced by neutron, 6,7 electron, 8 proton, 9 and alpha 10 particle irradiations as well as by ion implantations 11,12 of Si. Supersaturation of interstitials leads to the formation of {311} extended defects.…”