Identification of a defect in a semiconductor:<i>EL</i>2 in GaAs

Bardeleben, H. J. von; Stiévenard, D.; Deresmes, D.; Huber, A. M.; Bourgoin, J. C.

doi:10.1103/physrevb.34.7192

Cited by 241 publications

(52 citation statements)

References 42 publications

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“…We whish only to underline here that the most plausible microscopic model of EL2 which does seem to account for much of what is known experimentally is that of von Bardeleben et al [65,66] [18] proposed that EL2 appears at the stage IV of annealing between 400 and 500 °C during which clusters of native defects created by heavy particle irradiation dissociate and migrate to form more stable forms. In fact, these authors cannot detect EL2 directly after ion implantation because their material becomes highly resistive due to the large doses used and the DLTS measurements cannot give valuable informations.…”

mentioning

confidence: 99%

“…Using this theory for fast electron irradiated n-GaAs, they have attributed the observed high-temperature DLTS peaks (E4 and E5) to defect pairs each including the EL2 midgap donor (Asoa or AsGa + X) together with one of the acceptors (E2 and E3 respectively) which are both related to (VAs -Asi) [14]. Each [65,66]. 5) EL2 is not the AsGa isolated antisite and it is a more complex defect involving AsGa as a core : AsGa + Asi [65,66].…”

mentioning

confidence: 99%

“…Each [65,66]. 5) EL2 is not the AsGa isolated antisite and it is a more complex defect involving AsGa as a core : AsGa + Asi [65,66].…”

mentioning

confidence: 99%

“…Recently, various models for EL2 have been proposed all with ASGA as a core such as : i) AsGa vacancy complexes : AsGa-VAs [81,82] or AsGaVAs-VGa [83,84] ; ii) As aggregates [23] ; iii) AsGaarsenic interstitial complex : ASG.-Asi [65,66]. We whish only to underline here that the most plausible microscopic model of EL2 which does seem to account for much of what is known experimentally is that of von Bardeleben et al [65,66] [18] proposed that EL2 appears at the stage IV of annealing between 400 and 500 °C during which clusters of native defects created by heavy particle irradiation dissociate and migrate to form more stable forms.…”

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confidence: 99%

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EL2-related studies in irradiated and implanted GaAs

Guillot

1988

Rev. Phys. Appl. (Paris)

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Résumé. 2014 Le donneur profond EL2 est un défaut très important par le rôle qu'il joue dans la compensation du matériau GaAs semi-isolant non dopé. La Abstract. 2014 The midgap donor level EL2 is a very important defect because of the role it plays in the compensation of undoped semi-insulating GaAs. The knowledge of the exact EL2 structure becomes of even greater prime importance. We present here a review of the experimental results concerning artificial EL2 creation by electron and neutron irradiation and also ion implantation followed or not by annealing. These studies have greatly contributed in specifying the nature of EL2 namely a complex intrinsic defect with an arsenic antisite as a core (AsGa + X). We point out some new concepts such as hopping transitions due to interdefect electron tunnelling which have been tentatively proposed to account for observations in implanted and neutron irradiated samples. We also discuss the main results of these artificial creation experiments as a function of the recent models proposed for EL2 up to the present day.

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confidence: 99%

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confidence: 99%

“…Each [65,66]. 5) EL2 is not the AsGa isolated antisite and it is a more complex defect involving AsGa as a core : AsGa + Asi [65,66].…”

mentioning

confidence: 99%

mentioning

confidence: 99%

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EL2-related studies in irradiated and implanted GaAs

Guillot

1988

Rev. Phys. Appl. (Paris)

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“…It was believed that the intricacy of a defect complex was required to achieve more than one configuration 180 yielding a local minimum in energy. Thus it was proposed that an ASGa plus an Asi at two interatomic distances from the ASGa formed the EL2 detect (Von Bardeleben, et al 1985, Von Bardeleben, et al 1986). This model is supported by the results of optically detected EPR and ENDOR measurements (Meyer, et al 1986).…”

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confidence: 99%

Defect studies in low-temperature-grown GaAs

Bliss¹

1992

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Ab initio molecular orbital theory study of GaAs clusters: The geometry

Korambath

Singaraju

Karna

2000

Int. J. Quant. Chem.

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ABSTRACT:We have studied the structure and geometry of neutral and charged atomic clusters consisting of Ga and As atoms via ab initio Hartree-Fock (HF) and second-order Møller-Plesset methods. The Ga m As n cluster with m = n composition prefers a nontetrahedral geometry in the charge neutral (q = 0) state. These clusters tend to be stable in tetrahedral geometry when appropriately charged. The Ga m As n cluster with m = n composition (1:1 ratio of Ga to As atoms) tends to be stable in a tetrahedral geometry in the charge neutral (q = 0) state. With increasing size of the cluster, the geometry of Ga n As n cluster approaches the zinc-belende-type crystalline structure.

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Identification of a defect in a semiconductor:EL2 in GaAs

Cited by 241 publications

References 42 publications

EL2-related studies in irradiated and implanted GaAs

EL2-related studies in irradiated and implanted GaAs

Defect studies in low-temperature-grown GaAs

Ab initio molecular orbital theory study of GaAs clusters: The geometry

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