2009
DOI: 10.1364/josab.26.000610
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Identification of competing ultrafast all-optical switching mechanisms in Si woodpile photonic crystals

Abstract: We present a systematic study of ultrafast all-optical switching of Si photonic band gap woodpile crystals using broadband tunable nondegenerate pump-probe spectroscopy. At pump-probe coincidence, we investigate the behavior the differential reflectivity at the blue edge of the stopband for a wide range of pump-and probe frequencies. Both dispersive and absorptive features are observed from the probe spectra at coincidence. As the pump frequency is tuned through half the electronic bandgap of Si, the magnitude… Show more

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Cited by 20 publications
(19 citation statements)
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“…21 This effect would allow ultrafast back-and-forth switching of photonic gaps. 17 The results of the z-scan measurements that were performed on Si and GaAs in the frequency range close to half the electronic bandgap are summarized in Table I. The Si data are in good agreement with Refs.…”
Section: Z-scan Measurements On Gap At Ir Wavelengthssupporting
confidence: 78%
“…21 This effect would allow ultrafast back-and-forth switching of photonic gaps. 17 The results of the z-scan measurements that were performed on Si and GaAs in the frequency range close to half the electronic bandgap are summarized in Table I. The Si data are in good agreement with Refs.…”
Section: Z-scan Measurements On Gap At Ir Wavelengthssupporting
confidence: 78%
“…The cavity is switched with the electronic Kerr effect by judicious tuning of the pump and the probe frequencies relative to the semiconductor bandgap [20,22]. The probe frequency…”
Section: Sample and Experimental Setupmentioning
confidence: 99%
“…The electronic Kerr effect is, in terms of speed, the ultimate way for ultrafast switching due to its material independent and instantaneous response nature [10]. Yet, the excitation of relatively slow free carriers has to be avoided to accomplish a positive refractive index change with the electronic Kerr effect, since free carriers lead to an opposite change of refractive index [19,20]. The main challenge is therefore to find a range of parameters where solely the Kerr effect controls the optical properties of the cavity.…”
Section: Introductionmentioning
confidence: 99%
“…The realization of such tunability opens a way for fully onchip trapping, releasing, and delaying of signal optical pulses. Our approach can be realized, in particular, with the chalcogenide glass platform [8] or in AlGaAs structures at the telecom spectral range [9], whereas nonlinear losses in Si platform can also be suppressed if the pump is tuned to longer wavelengths to avoid two-photon ab- sorption [10].…”
mentioning
confidence: 99%