Identification of donors in vapor grown indium phosphide

Dean, P. J.; Skolnick, M. S.; Taylor, L. L.

doi:10.1063/1.333150

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1984

1991

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Cited by 36 publications

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“…The main advantage derived from the use of high magnetic fields is the strong narrowing of the recombination lines by up to a factor of 4 which permits the resolution of features due to different shallow donors. 1,2 In the present letter donor identification using high resolution PL spectroscopy is performed on liquid phase epitaxial (LPE) layers of InP grown in two different laboratories, the Forschungsinstitut der Deutschen Bundespost (FI/ DBP) and Lincoln Laboratory (LL). Similar results for the identities of the shallow donors in material grown at the two institutions are found.…”

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confidence: 99%