Identification of grain boundaries as degradation site in n-channel organic field-effect transistors determined via conductive atomic force microscopy

Müller, Sebastian; Baumann, Roelf‐Peter; Geßner, Thomas; Weitz, R. Thomas

doi:10.1002/pssr.201600008

Cited by 10 publications

(13 citation statements)

References 27 publications

(33 reference statements)

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“…[41] As mentioned above, threshold voltage shifts ∆V th originate from trapped charges, either in the bulk of the semiconductor, at the semiconductor-dielectric interface, or at grain boundaries. [72,73] Consequently, the stability of the threshold voltage depends on the individual materials in the OFET as well on the interfaces and the processing. Furthermore, additional trap states might be formed by external impurities such as water and oxygen, similar as discussed for the PLEDs.…”

Section: Performance and Stability Of Polymer Fetsmentioning

confidence: 99%

Polymer Electronics: To Be or Not to Be?

Blom

2020

Adv Materials Technologies

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The realization that polymers can be used as active material in opto‐electronic applications initiated substantial effort in the scientific community to explore new materials. Polymers can be made strong, flexible, lightweight, and can be mass produced. Furthermore, polymers can be processed at low temperatures, typically below 150 °C, creating the opportunity to use a range of plastic substrates instead of glass. Many polymers are soluble in organic solvents, making it possible to create electronically active “inks” that allow for solution‐processed electronic components as light‐emitting diodes and transistors. Examples of innovative new products based on semiconducting polymers are inkjet‐printed displays, non‐contact radio frequency identification tags, and sensors. However, the realization of polymeric displays is hindered by the relatively low efficiency of polymer‐based light‐emitting diodes. Major problems are the inability to realize multi‐layers from solution, insufficient harvesting of triplet excitons and the presence of defects. Printed circuits of organic transistors are still hampered by stability issues and relatively low charge carrier mobility of the organic semiconductors. More recently, organic electrochemical transistors have been employed as biosensors. Herein, the fundamentals and recent progress of polymer‐based light‐emitting devices and transistors are being discussed.

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Section: Performance and Stability Of Polymer Fetsmentioning

confidence: 99%

Polymer Electronics: To Be or Not to Be?

Blom

2020

Adv Materials Technologies

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“…It is therefore important to understand the implications of grain boundaries in small molecular thin films on charge transport. In realistic thin film transistors, grain boundaries can dominate charge transport, since they can act as traps for charges thus reducing the charge carrier mobility 33 , 34 , lead to increased bias stress 35 , 36 or lower long-term electrical stability 37 , 38 . Additionally, the impact of grain boundaries seems to be especially strong if the semiconductor is only one monolayer thin 29 .…”

Section: Introductionmentioning

confidence: 99%

Energy barriers at grain boundaries dominate charge carrier transport in an electron-conductive organic semiconductor

Vladimirov

Kühn

Geßner

et al. 2018

Sci Rep

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Semiconducting organic films that are at the heart of light-emitting diodes, solar cells and transistors frequently contain a large number of morphological defects, most prominently at the interconnects between crystalline regions. These grain boundaries can dominate the overall (opto-)electronic properties of the entire device and their exact morphological and energetic nature is still under current debate. Here, we explore in detail the energetics at the grain boundaries of a novel electron conductive perylene diimide thin film. Via a combination of temperature dependent charge transport measurements and ab-initio simulations at atomistic resolution, we identify that energetic barriers at grain boundaries dominate charge transport in our system. This novel aspect of physics at the grain boundary is distinct from previously identified grain-boundary defects that had been explained by trapping of charges. We furthermore derive molecular design criteria to suppress such energetic barriers at grain boundaries in future, more efficient organic semiconductors.

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“…[1][2][3][4][5][6][7][8][9][10][11][12] Utilizing OFETs as light sensors is of interest as the active organic layer can be tailored to absorb photons of specific energy which when combined with the gain offered by the transistor can result in a highly sensitive device. [13][14][15][16][17][18][19] Recently, polymer-based organic photosensitive transistors (OPTs) have been demonstrated, opening the possibility to print these devices on flexible substrates, leading to flexible optoelectronic systems. [20][21][22] Previously, it was reported by Narayan and Kumar that poly(3-octylthiophene)-based OPTs demonstrated a photosensitivity (P) of 10 2 and a responsivity (R) of 1 A W À1 at a wavelength of 525 nm.…”

Section: Introductionmentioning

confidence: 99%

Development of High‐Sensitivity Poly(2,7‐(9,9‐dioctylfluorene)‐alt‐5,5‐(4′,7′‐di‐2‐thienylbenzo [c][1,2,5]thiadiazole)) Thin‐Film‐Based Phototransistors by the Ribbon‐Floating Film Transfer Method

Yadav

Kumari

Ando

et al. 2021

Physica Rapid Research Ltrs

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Alignment of polymer chains holds the key to the development of highly functional polymer‐based field‐effect transistors (FETs). The recently developed ribbon‐floating film transfer method (ribbon‐FTM) has the potential for development of polymer thin films with highly aligned chains, which are desirable for fabrication of efficient planar devices. These thin films consisting of well‐aligned polymer chains exhibit high degree of optical and electronic anisotropies. Herein, ribbon‐FTM‐processed thin‐film‐based organic photosensitive transistors of poly(2,7‐(9,9‐dioctylfluorene)‐alt‐5,5‐(4′,7′‐di‐2‐thienylbenzo [c][1,2,5]thiadiazole)) (PFO‐DBT) are reported. Under optimized fabrication conditions, polymer FETs based on PFO‐DBT demonstrate a charge carrier mobility of 0.002 cm2 V−1 s−1 and an on–off ratio of 5 × 104 under dark conditions. The devices further demonstrate a photosensitivity of ≈104 and 103 and a high responsivity of 8.37 and 4.6 A W−1 against green and red light illuminations, respectively. The results hold promise for the development of conducting‐polymer‐based high‐performance photosensitive organic field‐effect transistors (OFETs).

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Identification of grain boundaries as degradation site in n-channel organic field-effect transistors determined via conductive atomic force microscopy

Cited by 10 publications

References 27 publications

Polymer Electronics: To Be or Not to Be?

Polymer Electronics: To Be or Not to Be?

Energy barriers at grain boundaries dominate charge carrier transport in an electron-conductive organic semiconductor

Development of High‐Sensitivity Poly(2,7‐(9,9‐dioctylfluorene)‐alt‐5,5‐(4′,7′‐di‐2‐thienylbenzo [c][1,2,5]thiadiazole)) Thin‐Film‐Based Phototransistors by the Ribbon‐Floating Film Transfer Method

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