Identification of N–H related acceptor defects in GaAsN grown by chemical beam epitaxy using hydrogen isotopes

Elleuch, Omar; Wang, Li; Lee, Kan‐Hua; Ikeda, Kazuma; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

doi:10.1016/j.jallcom.2015.07.198

Cited by 2 publications

(1 citation statement)

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“…21,22) The N-H-related defects were also confirmed in GaNAs grown by chemical beam epitaxy (CBE) and considered as acceptors according to deep-level transient spectroscopy (DLTS). [23][24][25][26] The result means that N-H-related defects can contribute to the background carrier concentration (BGCC), which is one of the reasons for the degradation of GaInNAs solar cells. To quantitatively evaluate the BGCC and other effects of N-Hrelated defects on the properties of GaInNAs solar cells, the growth technology should have hardly any impurity (such as carbon in CBE, acting as BGCC as well) to avoid interference.…”

Section: Introductionmentioning

confidence: 99%

N–H-related deep-level defects in dilute nitride semiconductor GaInNAs for four-junction solar cells

Miyashita

Okada

2018

Jpn. J. Appl. Phys.

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Deep-level defects were investigated and compared among three molecular beam epitaxy (MBE)-grown dilute nitride semiconductor GaInNAsSb solar cells, one of which was as-grown and the other two were annealed in a metal organic chemical vapor deposition (MOCVD) atmosphere (H 2 and AsH 3 ) or a nitrogen (N 2 ) atmosphere. A residual defect in the as-grown sample was firstly discovered and considered to be mainly responsible for the degradation in GaInNAsSb solar cells. Meanwhile, an N-H-related defect was confirmed, as well as the effects on background carrier concentration (BGCC) together with hydrogen incorporation. The N 2 annealing showed a significant effectiveness of suppressing the defects and improving the solar cell properties.

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