Identification of nitrogen decorated vacancies in CVD diamond films using positron annihilation coincidence Doppler broadening spectroscopy

Sachdeva, Amit; Sudarshan, K.; Pujari, P. K.; Goswami, A.; Sreejith, K.; George, Varughese; Pillai, C.G.S.; Dua, A.K.

doi:10.1016/j.diamond.2004.02.009

Cited by 14 publications

(12 citation statements)

References 12 publications

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“…Since PL measurements evidence the creation of NV − defect, we propose that it is the defect associated to D2. This claim is supported by previous work showing an increase of W due to nitrogen decoration of vacancies in diamond 22 . Note that for 5 × 10 14 cm −2 and 5 × 10 16 cm −2 fluences (S/S L , W/W L ) points which are initially off the monovacancy D1 line finally end onto D2 after annealing.…”

Section: Positron Annihilation Measurementssupporting

confidence: 84%

Optimal conditions forNV−center formation in type-1b diamond studied using photoluminescence and positron annihilation spectroscopies

Botsoa¹,

Sauvage²,

Adam³

et al. 2011

Phys. Rev. B

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We studied the parameters to optimize the production of negatively-charged nitrogen-vacancy color centers (NV − ) in type 1b single crystal diamond using proton irradiation followed by thermal annealing under vacuum. Several samples were treated under different irradiation and annealing conditions and characterized by slow positron beam Doppler-broadening and photoluminescence (PL) spectroscopies. At high proton fluences another complex vacancy defect appears limiting the formation of NV − . Concentrations as high as 2.3 × 10 18 cm −3 of NV − have been estimated from PL measurements. Furthermore, we inferred the trapping coefficient of positrons by NV − . This study brings insight into the production of a high concentration of NV − in diamond, which is of utmost importance in ultra-sensitive magnetometry and quantum hybrid systems applications.

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Section: Positron Annihilation Measurementssupporting

confidence: 84%

Optimal conditions forNV−center formation in type-1b diamond studied using photoluminescence and positron annihilation spectroscopies

Botsoa¹,

Sauvage²,

Adam³

et al. 2011

Phys. Rev. B

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“…Recently, Doppler broadening measurements were improved by a two-Gedetector coincidence system, which decreased the background of high momentum contributions by about two or three orders of magnitude compared with traditional measurements using one Ge detector [7]. Coincidence Doppler broadening (CDB) has been used widely to detect precipitates in alloys [8][9][10][11]. Thus, in this work, the positron lifetime and coincidence Doppler broadening were used to measure the defects and segregation of elements in neutron-irradiated 4H-SiC.…”

Section: Introductionmentioning

confidence: 99%

Positron annihilation of vacancy-type defects in neutron-irradiated 4H–SiC

Yoshiie

Okada

2009

Journal of Nuclear Materials

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“…Considering that the value of the W-parameter of the specimen fabricated at 2200 • C is higher than that prepared at 2100 • C, it can be concluded that the antisite defect was generated by the C atoms filling the Si vacancies during the sintering process, which increased probability of the annihilation of the positron with the high momentum electrons. This can also be confirmed by comparing the ratio curve [28] or the energy spectra of carbon [29] and SiC [30]-i.e., in the energy spectrum graphite crystals have larger proportion of the integrated area of the region corresponding to high-momentum electrons. The positron lifetime does not change significantly when the silicon vacancy transforms into the antisite defects [27], thus the components of the antisite defects in the result of positron lifetime are not distinguished from that of the Si vacancy.…”

Section: Defect Structurementioning

confidence: 64%

Microstructural Analysis of Novel Preceramic Paper-Derived SiCf/SiC Composites

Kashkarov

et al. 2021

Materials

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This paper presents the results of microstructural analysis of novel preceramic paper-derived SiCf/SiC composites fabricated by spark plasma sintering. The sintering temperature and pressure were 2100/2200 °C and 60/100 MPa, respectively. The content of fibers in the composites was approx. 10 wt %. The SiCf/SiC composites were analyzed by positron annihilation methods, X-ray diffraction technology, scanning electron microscopy, and Raman spectroscopy. Longer sintering time causes the proportion of the 6H-SiC composition to increase to ~80%. The increase in sintering temperature from 2100 °C to 2200 °C leads to partial transition of 4H-SiC to 6H-SiC during the sintering process, and the long-life component of positrons indicates the formation of Si vacancies. The Raman characteristic peaks of turbostratic graphite appear in the Raman spectrum of SiC fibers, this is caused by the diffusion of carbon from the surface of the SiC fiber and the preceramic paper during the high-temperature sintering process.

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Identification of nitrogen decorated vacancies in CVD diamond films using positron annihilation coincidence Doppler broadening spectroscopy

Cited by 14 publications

References 12 publications

Optimal conditions forNV−center formation in type-1b diamond studied using photoluminescence and positron annihilation spectroscopies

Optimal conditions forNV−center formation in type-1b diamond studied using photoluminescence and positron annihilation spectroscopies

Positron annihilation of vacancy-type defects in neutron-irradiated 4H–SiC

Microstructural Analysis of Novel Preceramic Paper-Derived SiCf/SiC Composites

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