Identification of Si film traps in p-channel SOI FinFETs using low temperature noise spectroscopy

Achour, H.; Cretu, Bogdan; Simoen, Eddy; Routoure, Jean‐Marc; Carin, R.; Benfdila, A.; Aoulaiche, M.; Claeys, Cor

doi:10.1016/j.sse.2015.02.014

Cited by 11 publications

(8 citation statements)

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“…The values of + − $ were found to be 0.21 and 0.27 eV for "Peak 1" and "Peak 2," respectively. Identification of trap species, for example, hydrogen, interstitial carbon, and interstitial boron, was reported [33], in which the activation energies ranged from 0.10 to 0.44 eV. To do the same here, further investigation using more DUTs will be required.…”

Section: Low-frequency Noise Spectroscopy (Lfns)mentioning

confidence: 83%

“…Using this capability, low-frequency noise measurement is commonly employed to characterize the quality of gate dielectrics [30]. In this paper, we will also demonstrate low-frequency noise spectroscopy (LFNS) [31][32][33][34], in which, by characterizing temperature-dependent noise intensities of a MOSFET, the activation energy related to electron trapping is extracted.…”

Section: Introductionmentioning

confidence: 99%

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Variable-Temperature Noise Characterization of N-MOSFETs Using an In-Situ Broadband Amplifier

Ohmori¹,

Amakawa²

2021

IEEE J. Electron Devices Soc.

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Characterization of broadband noise of MOSFETs from room temperature down to 120 K in fine temperature steps is presented. A MOSFET is mounted on a reusable printed circuit board vehicle with a built-in low-noise amplifier, and the vehicle is loaded into a cryogenic chamber. The vehicle allows noise measurement in the frequency range from 50 kHz to 100 MHz. At low frequencies, it enables extraction of activation energies associated with electron trapping sites. At high frequencies, as has been suggested by noise figure measurements, the white noise of MOSFETs is shown to be dominated by the shot noise, which has much weaker temperature dependence than the thermal noise. The shot noise will be a problematic noise source in broadband RF CMOS circuits operating at cryogenic temperatures.

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Section: Low-frequency Noise Spectroscopy (Lfns)mentioning

confidence: 83%

Section: Introductionmentioning

confidence: 99%

Variable-Temperature Noise Characterization of N-MOSFETs Using an In-Situ Broadband Amplifier

Ohmori¹,

Amakawa²

2021

IEEE J. Electron Devices Soc.

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“…The values of > − $ were found to be 0.21 and 0.27 eV for "Peak 1" and "Peak 2," respectively. Identification of trap species, for example, hydrogen, interstitial carbon, and interstitial boron, was reported [32], in which the activation energies ranged from 0.10 to 0.44 eV. To do the same here, further investigation using more DUTs will be required.…”

Section: Low-frequency Noise Spectroscopy (Lfns)mentioning

confidence: 83%

“…Using this capability, low-frequency noise measurement is commonly employed to characterize the quality of gate dielectrics [29]. In this paper, we will also demonstrate low-frequency noise spectroscopy (LFNS) [30][31][32][33], in which, by characterizing temperature-dependent noise intensities of a MOSFET, the activation energy related to electron trapping is extracted.…”

Section: Introductionmentioning

confidence: 99%

Variable-Temperature Noise Characterization of N-MOSFETs Using an In-Situ Broadband Amplifier

Ohmori¹,

Amakawa²

2021

Preprint

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Characterization of broadband noise of MOSFETs from room temperature down to 120 K in fine temperature steps is presented. A MOSFET is mounted on a reusable printed circuit board vehicle with a built-in low-noise amplifier, and the vehicle is loaded into a cryogenic chamber. The vehicle allows noise measurement in the frequency range from 50 kHz to 100 MHz. At low frequencies, it enables extraction of activation energies associated with electron trapping sites. At high frequencies, as has been suggested by noise figure measurements, the white noise of MOSFETs is shown to be dominated by the shot noise, which has much weaker temperature dependence than the thermal noise. The shot noise will a problematic noise source in broadband RF CMOS circuits operating at cryogenic temperatures.<div><br></div>

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“…Indeed, for the estimation of the volume trap density in conventional planar devices a correction parameter (B) value of 1/3 should be considered [7]. However, it was already demonstrated that this B parameter value is no longer a constant for multiple-gate devices [3,13]. The obtained values of the surface trap density of the identified traps, summarized in Table 2 are moderately larger compared to those previously reported for other advanced technologies [13,14].…”

Section: B Lfn As a Function Of The Temperaturementioning

confidence: 96%

Low frequency noise analysis on Si/SiGe superlattice I/O n-channel FinFETs

Boudier

Cretu

Simoen

et al. 2019

2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

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Low frequency noise studies are performed in Si/SiGe superlattice I/O n-channel FinFETs. It was observed that the experimental noise spectra may contain additionally to flicker and white noise one or several generation recombination (GR) components. The methodology to estimate the noise parameters corresponding to the 1/f noise and each GR noise contribution was detailed. It is found that the carrier number fluctuations mechanisms prevail the 1/f noise. The important 1/f noise level variability observed for devices having the same geometry may be related to the remote Coulomb scattering effect through the correlation between the mobility and the 1/f noise levels. Low frequency noise spectroscopy was performed allowing to identify traps related to divacancies, hydrogen and a possible carbon contamination in Si/SiGe fins.

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Identification of Si film traps in p-channel SOI FinFETs using low temperature noise spectroscopy

Abstract: , et al.. Identification of Si film traps in p-channel SOI FinFETs using low temperature noise spectroscopy. Solid-State Electronics, Elsevier, 2015, 112, pp

Cited by 11 publications

References 20 publications

Variable-Temperature Noise Characterization of N-MOSFETs Using an In-Situ Broadband Amplifier

Variable-Temperature Noise Characterization of N-MOSFETs Using an In-Situ Broadband Amplifier

Variable-Temperature Noise Characterization of N-MOSFETs Using an In-Situ Broadband Amplifier

Low frequency noise analysis on Si/SiGe superlattice I/O n-channel FinFETs

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