Identification of the atomic scale defects involved in radiation damage in HfO/sub 2/ based MOS devices

Ryan, Jason T.; Lenahan, Patrick M.; Kang, Ai-Guo; Conley, John F.; Bersuker, G.; Lysaght, Patrick

doi:10.1109/tns.2005.860665

Cited by 38 publications

(17 citation statements)

References 35 publications

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“…Therefore, materials such as Al 2 O 3 , 10 HfO 2 , [11][12][13] and TiO 2 14,15 have been studied for developing the radiation hardened electrical or optoelectronic devices. Among these materials, TiO 2 is a strong candidate due to its high dielectric constant (k ¼ 70) and good thermal stability to replace SiO 2 .…”

mentioning

confidence: 99%

1.5 MeV proton irradiation effects on electrical and structural properties of TiO2/n-Si interface

Ishfaq

Khan

Bhopal

et al. 2014

Journal of Applied Physics

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In this paper, we report the effect of 1.5 MeV proton beam irradiation dose on the structural and electrical properties of TiO 2 thin films deposited on n-Si substrates. The formation and transformation of different TiO 2 phases in the irradiated thin films were characterized by X-ray diffraction and X-ray photoelectron spectroscopy (XPS). X-ray diffraction measurements revealed that the as grown film was rich in Ti 5 O 9 phase and then converted to mixed phases of TiO 2 (rutile and anatase) after exposure with radiation doses up to 5 Â 10 14 cm À2 . The XPS results revealed the formation of oxygen vacancy (negative) traps in the exposed TiO 2 films, which showed strong dependence on the dose. The C-V measurements showed that proton radiations also damaged the Si substrate and created deep level defects in the substrate, which caused a shift of 0.26 6 0.01 V in the flat band voltage (V FB ). I-V measurements showed that the ideality factor increased and the rectification ratio dropped with the increase in the radiation dose. The present study showed the stability of TiO 2 /Si interface and TiO 2 film as an oxide layer against proton radiations. V C 2014 AIP Publishing LLC. [http://dx.

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mentioning

confidence: 99%

1.5 MeV proton irradiation effects on electrical and structural properties of TiO2/n-Si interface

Ishfaq

Khan

Bhopal

et al. 2014

Journal of Applied Physics

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“…Figure 1 illustrates a post-VUV EPR trace and figure 2 illustrates pre-and post-gamma irradiation traces. The signal on the far right of both traces were tentatively linked to an oxygen vacancy by Ryan et al [10] and by Lenahan and Conley [11]. These representative results indicate the presence of oxygen vacancies and oxygen interstitials [9][10][11].…”

Section: Hfo 2 Defectsmentioning

confidence: 62%

“…reported the generation of two strong signals in HfO 2 films subjected to, respectively, vacuum ultraviolet (VUV) illumination under bias and gamma irradiation. These representative results indicate the presence of oxygen vacancies and oxygen interstitials [9][10][11]. Figure 1 illustrates a post-VUV EPR trace and figure 2 illustrates pre-and post-gamma irradiation traces.…”

Section: Hfo 2 Defectsmentioning

confidence: 95%

Defects in HfO₂ Based Dielectric Gate Stacks

et al. 2009

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We report on both conventional electron paramagnetic resonance (EPR) measurements of fully processed HfO 2 based dielectric films on silicon and on electrically detected magnetic resonance (EDMR) measurements of fully processed HfO 2 based MOSFETs. The magnetic resonance measurements indicate the presence of oxygen vacancy and oxygen interstitial defects within the HfO 2 and oxygen deficient silicons in the interfacial layer. The EDMR results also indicate the generation of at least two defects when HfO 2 based transistors are subjected to significant negative bias at modest temperature. Our results indicate generation of multiple interface/near interface defects, likely involving coupling with nearby hafnium atoms.

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“…This indicates that the resistance of both the RHRS and RLRS decreases as the irradiation dose rises. A higher irradiation dose will generate more oxygen vacancies inside the HfO 2 layer [26], thus increasing the conduction of electrons through the oxygen vacancies and reducing the resistance of the conducting path. Fig.…”

Section: Resultsmentioning

confidence: 99%

Study of radiation hardness of HfO2-based resistive switching memory at nanoscale by conductive atomic force microscopy

Lin

Hwang

et al. 2015

Microelectronics Reliability

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Identification of the atomic scale defects involved in radiation damage in HfO/sub 2/ based MOS devices

Cited by 38 publications

References 35 publications

1.5 MeV proton irradiation effects on electrical and structural properties of TiO2/n-Si interface

1.5 MeV proton irradiation effects on electrical and structural properties of TiO2/n-Si interface

Defects in HfO₂ Based Dielectric Gate Stacks

Study of radiation hardness of HfO2-based resistive switching memory at nanoscale by conductive atomic force microscopy

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Identification of the atomic scale defects involved in radiation damage in HfO/sub 2/ based MOS devices

Cited by 38 publications

References 35 publications

1.5 MeV proton irradiation effects on electrical and structural properties of TiO2/n-Si interface

1.5 MeV proton irradiation effects on electrical and structural properties of TiO2/n-Si interface

Defects in HfO2 Based Dielectric Gate Stacks

Study of radiation hardness of HfO2-based resistive switching memory at nanoscale by conductive atomic force microscopy

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Product

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Defects in HfO₂ Based Dielectric Gate Stacks