Identification of the L‐Band in In_xGa_1−xP/In)_0.5Al_0.5P Multiple Quantum Wells from High Pressure Measurement

Abstract

High pressure photoluminescence measurements used to study the band structure of the In,Gal -. P / I Q .~A~.~P (z 5 0.48) multiple quantum wells revealed that in narrow-lattice-matched and highly tensile strain structures the L1, band is the lowest conduction band state. The L1, minimum was identified as it shifted with pressure at a rate of (60 * 5) meV/GPa, considerably smaller than that of the direct gap TIc states.