Identification of the Optimum Time-Delay for Chaos Synchronization Regimes of Semiconductor Lasers

Peters-Flynn, S.; Spencer, P.S.; Sivaprakasam, S.; Pierce, I.; Shore, K.A.

doi:10.1109/jqe.2006.872312

Cited by 20 publications

(9 citation statements)

References 23 publications

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“…Beyond , the degree of synchronization saturates at about 80%. It is worth mentioning that synchronization does not occur at the flying time between master and slave lasers but it is slightly shifted (about 10 ps) in agreement with recent results [12].…”

supporting

confidence: 91%

Synchronization properties of two coupled multisection semiconductor lasers emitting chaotic light

Pérez

Radziunas

Wünsche

et al. 2006

IEEE Photon. Technol. Lett.

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Abstract-We present numerical simulations describing the dynamics of two multisection semiconductor lasers emitting in a chaotic regime coupled in a master-slave configuration. By changing the current of the passive section of the master laser, we observe a change in the maximum correlation between the outputs of the two systems. These devices are promising candidates for on-off phase-shift keying encryption.Index Terms-Chaos communications, multisection lasers. CHAOS-BASED communication can be considered as an alternative technique to encode and transmit information at high bit rate in conventional optical communication systems. Recent experiments in an installed optical fiber network have stressed the potential of this technique [1]. Within a chaotic carrier, the information can be encoded in different ways, the most common ones being chaos shift keying [2], amplitude chaos masking [3], and chaos modulation [1]. As an alternative to these traditional schemes, a new promising encryption method termed on-off phase-shift keying (OOPSK) has been proposed recently [4], [5]. It requires two external cavity semiconductor lasers, matched within a certain precision, operating in a chaotic regime unidirectionally coupled in a master-slave configuration. If the external cavities of the lasers are identical, the two outputs synchronize with a high correlation coefficient. However, if the two cavities differ within subwavelength precision, synchronization quality degrades [4]. By periodically, or aperiodically, changing slightly the external cavity of the master laser, the slave becomes synchronized (high correlation coefficient) or unsynchronized (low correlation coefficient) with the master. These two states, synchronized and unsynchronized, allow us to define two bits, "0" and "1" [5]. The main advantage is that no traces of the message can be guessed either in time or in the frequency domain. Calculations reveal that the maximum rate at which information can be encrypted with the OOPSK method depends on the resynchronization time when the system moves from an unsynchronized stated to a synchronized one. This time depends, as well, on the round-trip time in the external cavity [6]. Consequently, external cavity semiconductor lasers would only allow for bit rates M s [5]. This limitation could be overcome by using much shorter feedback paths.In this letter, we consider the limit of ultrashort optical feedback [7] with delay times of only a few picoseconds. Ultrashort optical feedback can be achieved by integrating the feedback path into the semiconductor laser in the framework of a multisection structure [8]. The result is a compact and robust device which, in addition to the short time scales, is an important requirement for possible applications. Multisection lasers are indeed expected to be essential sources for high bit rate OOPSK encryption.The particular laser structure considered here consists of three sections (see Fig. 1): a single-mode m distributed feedback (DFB) laser, a passive phase-tuning section of higher...

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supporting

confidence: 91%

Synchronization properties of two coupled multisection semiconductor lasers emitting chaotic light

Pérez

Radziunas

Wünsche

et al. 2006

IEEE Photon. Technol. Lett.

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“…The line intersects an area of very good synchronization quality, C > 97%, at relatively small injection rates (Fig. 2 dark blue area) (Peters-Flynn et al 2006). Within this area a local maximum in the correlation is observed at an injection rate immediately above boundary A, κ c = 38 ns −1 .…”

Section: Injection-locking Diagrammentioning

confidence: 75%

“…The Fast Fourier Transform (FFT) of the ML and SL intensities are also calculated using a 52 ns window offset by the time difference required to obtain maximum correlation (Peters-Flynn et al 2006). The SL intensity is shifted by τ in order that the SL FFT represents the time period for which the strongest synchronization with the ML is attained.…”

Section: Injection-locking Diagrammentioning

confidence: 99%

Frequency domain analysis of the chaotic synchronization of injection-locked semiconductor lasers

Lea

Spencer

2008

Opt Quant Electron

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The quality and degree of synchronization obtained between a chaotic master laser diode and a slave laser diode is usually assessed using a correlogram. This technique is known to accurately identify areas of good synchronization, but it is not able to elucidate why these regions exist. By using a complementary frequency domain technique, the response gain, we have been able to obtain further insight into the synchronization process. We show using numerical simulations that trends in synchronization quality evident in the injection-locking diagram are also present in the response gain. We also show that most of the spectral power is situated in a small band of frequencies close to the relaxation oscillation frequency of the master laser and that accurate reproduction of these frequency components in the slave laser is vital in achieving a good synchronization. We associate the variation in synchronization quality within the injection-locking regime to changes in the response gain profile induced by the optical injection from the master laser. Variations in the spectral profile of the response gain clearly delineate and explain the various regions seen in the correlation synchronization diagram.

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“…This fact proves that the phenomenon originates from optical injection-locking and amplification. According to the detailed study by Peters-Flynn et al (2006), the laser output that is categorized as anticipating chaos synchronization in the stable injection-locking area in Fig. 12.10 sometimes shows a mixed state of waveforms corresponding to anticipating and injection amplification signals.…”

Section: Anticipating Chaos Synchronizationmentioning

confidence: 99%

Chaos Synchronization in Semiconductor Lasers

Ohtsubo

2012

Springer Series in Optical Sciences

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Identification of the Optimum Time-Delay for Chaos Synchronization Regimes of Semiconductor Lasers

Cited by 20 publications

References 23 publications

Synchronization properties of two coupled multisection semiconductor lasers emitting chaotic light

Synchronization properties of two coupled multisection semiconductor lasers emitting chaotic light

Frequency domain analysis of the chaotic synchronization of injection-locked semiconductor lasers

Chaos Synchronization in Semiconductor Lasers

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