2005
DOI: 10.1038/nmat1516
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Identifying and counting point defects in carbon nanotubes

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Cited by 268 publications
(265 citation statements)
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“…Naturally, SWNTs contain no edge-plane-like sites of the type held responsible for the EC response in MWNTs (41); also, for SWNTs grown by CVD, the ends are likely to be closed, which might be expected to lead to very slow HET kinetics (24,25). The only other type of defect site that one could reasonably consider is point defects in the sidewall, identified through electrodeposition (42). These have a spacing of 100 nm-4 μm (averaging approximately 400 nm) along the sidewall.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Naturally, SWNTs contain no edge-plane-like sites of the type held responsible for the EC response in MWNTs (41); also, for SWNTs grown by CVD, the ends are likely to be closed, which might be expected to lead to very slow HET kinetics (24,25). The only other type of defect site that one could reasonably consider is point defects in the sidewall, identified through electrodeposition (42). These have a spacing of 100 nm-4 μm (averaging approximately 400 nm) along the sidewall.…”
Section: Resultsmentioning
confidence: 99%
“…Given the defect density attributed from selective electrodeposition (42), vide supra, the SECCM pipet would be expected to encounter only one defect when passing over an SWNT. We thus consider this case, simulating a defect (at most) as a square of length 1 nm positioned in the plane of an inert substrate, for The SWNT height distribution from the AFM images.…”
Section: Resultsmentioning
confidence: 99%
“…49 The role of defects is not well understood in terms of their impact on the mechanical, electronic, and optical behavior of SWNTs. For some applications, defect sites advantageously provide a reactive site for covalent attachment of particles to the SWNT sidewall.…”
Section: Purification Of Swntsmentioning
confidence: 99%
“…In particular, it was demonstrated that intrinsic defects in metallic SWNTs embodied in source-drain-gate devices can provide resonant backscattering characteristics 8,9 leading to low-temperature quantum dot devices, as well as a high gate sensitivity at the defect position. 10 Thus, the knowledge of how and to which extent different types of defects can change the electronic properties of SWNTs is important, as it may open a route toward controllable engineering of the properties of SWNT-based electronic devices or even result in the appearance of a different class of devices with the properties entirely designed by a controlled creation of particular defects.…”
Section: Introductionmentioning
confidence: 99%