IGBT History, State-of-the-Art, and Future Prospects

Iwamuro, Noriyuki; Laska, T.

doi:10.1109/ted.2017.2654599

Cited by 266 publications

(81 citation statements)

References 34 publications

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“…With regard to reducing the kVA rating of the converter, we compare the strategy proposed in this paper and [17]. The calculation results are shown in Table 6, which are based on Equation (22). After adopting the PFC to transfer the partial active power and optimize and compensate for the VU, 12% of the capacity of PFC can be released, to 29.84 MVA.…”

Section: Vaildation Of Compensation Performancementioning

confidence: 99%

Modeling and Control of a Novel Hybrid Power Quality Compensation System for 25-kV Electrified Railway

Chen

Wei

2019

Energies

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The severe power quality problems aroused by the single-phase 25-kV traction power supply system (TPSS), especially for the voltage unbalance (VU) and high-frequency harmonic resonance, have attracted increasing attention nowadays. In this paper, a novel hybrid power quality compensation system, including a power flow controller (PFC) and thyristor-controlled L and C-type filter (TCL-CTF), is proposed. The PFC can be used for VU compensation, and the TCL-CTF can be designed to filter out harmonics as well as compensate reactive power. Furthermore, an optimized compensation strategy is proposed, and the power quality of the TPSS can meet the requirements of the technology standard. Compared with the conventional scheme, the compensation capacity of the PFC can be reduced by 12%, as well as the cost. Finally, the effectiveness of the proposed system is verified by the simulation and experimental results.

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Section: Vaildation Of Compensation Performancementioning

confidence: 99%

Modeling and Control of a Novel Hybrid Power Quality Compensation System for 25-kV Electrified Railway

Chen

Wei

2019

Energies

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“…Accordingly, the enclosed area S(t9) is caused by the rapid dic/dt before reaching Ipeak, and the decreasing collector current after Ipeak induces the negative area S(t10) on the veE waveform. In summary, the induced veE during the whole switching period is given by (1).…”

Section: B Switching Behavior and Related Veementioning

confidence: 99%

Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules

Luo

Iannuzzo

et al. 2018

IEEE Trans. Ind. Electron.

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This paper proposes the adoption of the inherent emitter stray inductance LeE in high-power insulated gate bipolar transistor (IGBT) modules as a new dynamic thermo-sensitive electrical parameter (d-TSEP). Furthermore, a family of 14 derived dynamic TSEP candidates has been extracted and classified in voltage-based, time-based and charge-based TSEPs. Accordingly, the perspectives and the implementation challenges of the proposed method are discussed and summarized. Finally, high-power test platforms are designed and adopted to experimentally verify the theoretical analysis. Index Terms-High-power IGBT modules, auxiliary parasitic inductance, dynamic thermo-sensitive electrical parameters, junction temperature extraction principles. I. INTRODUCTION HE fast-growing pace of high-power conversion systems keep developing high-power Insulated Gate Bipolar Transistors (IGBTs) [1,2]. Thermal performance is currently regarded as one of the most important specifications in high-power modules, since both the short-term characteristics [3] and long-term ones are temperature-dependent [4,5]. In terms of the maximum operating junction temperature Tj, the commercially-available silicon-based power devices are rated up to 175 °C and the expected operation Tj in Wide-Band-Gap devices can reach 300 °C [6]. Hence, the knowledge of Tj has a crucial effect on the safe operation area of IGBTs. So far, many practical methods have been proposed [7-10]. Generally, the widely-studied Tj estimation methods in

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“…In the 1970s, the evolution of electronic converters called for devices capable of self-turn-off, fast-switching, and high-withstand capability; they were achieved by building upon SCR technology [17]. A solution was found in the gate turn-off (GTO) thyristor.…”

Section: Massimo Guarnierimentioning

confidence: 99%

Solidifying Power Electronics [Historical]

Guarnieri

2018

EEE Ind. Electron. Mag.

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IGBT History, State-of-the-Art, and Future Prospects

Cited by 266 publications

References 34 publications

Modeling and Control of a Novel Hybrid Power Quality Compensation System for 25-kV Electrified Railway

Modeling and Control of a Novel Hybrid Power Quality Compensation System for 25-kV Electrified Railway

Enabling Junction Temperature Estimation via Collector-Side Thermo-Sensitive Electrical Parameters Through Emitter Stray Inductance in High-Power IGBT Modules

Solidifying Power Electronics [Historical]

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