2024
DOI: 10.1002/cta.4391
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IGBT Junction Temperature Estimation Based on External Parameters of Multiple Drive Devices in Practical Industrial Scenario

Chenglang Su,
Wei Jiang,
Zhicong Huang

Abstract: The insulated gate bipolar transistor (IGBT) is one of the most important power semiconductor devices in power electronics and is also prone to failure. High junction temperature and junction temperature fluctuation of IGBT are the main causes of IGBT module aging failure. The high‐precision monitoring of the junction temperature of the IGBT module is a prerequisite for IGBT life prediction, which is crucial for reducing maintenance costs and improving equipment reliability. Therefore, an IGBT junction tempera… Show more

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