Abstract:Small-signal capacitance in every datasheet of insulated gate bipolar transistor (IGBT) is not accurate for understanding IGBT's switching because the bipolar current in the device creates abnormal depletion profiles. IGBT's reverse transfer dynamic capacitance is extracted for the first time with a five-contact method. While small-signal capacitance does not allow any current flow in the drift region due to the ground gate, the dynamic capacitance is the output of the time-dependent bipolar carriers during th… Show more
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