Ignition Characteristics of Micro‐Energy Semiconductor Bridges with Different Ignition Compositions

Abstract

[a] 1IntroductionSemiconductor bridges (SCB), whose basic principle is producing heat or plasmat oi gnite energeticm aterials under the stimulation of electric energy, are one of the most important ignition components manufacturedb ym icroelectronics integrationt echnology,a nd has been widely employed in recent years [1][2][3].I ti sa lso conceivable to lower SCB ignitionv oltage by focusingo nt he core technology development of MEMS fuse, that is, to research and develop micro-energy SCB.N evertheless, SCB with multiple ignition compositions is entirely different in ignitionv oltage and current signal,w hich has prompted substantial research on firing sensitivity [4][5][6].In 2002,Y ang et al. studied the ignition characteristics of lead styphnate and lead azide, and results revealed that compared with lead styphnate, lead azide got ah igher reaction rate, which shortened the total ignitione lapsed time of ignition compositions.H owever,t he authors did not achieve deep analysis of the reaction mechanism [7].Z hu et al. studied SCB ignition characteristics under electrostatic discharge stimulation [8].T he breakthrough from conventional energetic compositions to nanoscale energetic mixtures has dramatically enhanced energy release rate and firing sensitivity,t hence, nanoenergetics are possiblya vailablef or use on SCB. Many studies have shown that the criticali gnition voltage and threshold energy for nanoenergetics are considerably smaller [9][10][11][12].A dditionally,t he possibility of SCB igniting HMX and PETN has also been studied [13][14][15], but the initiating voltage is more than 1kV, which is not conducive to the miniaturization of electric circuit.To find out ignition compositions that can be ignited by SCB and provideb asis for pyrotechnicss election,t he ignition characteristics of SCBs with different ignition compositions were studied and analyzed. With the stimulation of 10 mFt antalumc apacitor discharge, the voltage and current signals under different stimulations were detected with the digital oscilloscope, then were processed;i na ddition, the reaction mechanism ignition characteristics was analyzed. The criticali gnition voltages of different pyrotechnics weret ested byt he Neyer-D optimals ensitivity test method to analyze firings ensitivity,w hich can provide certain evidencef or subsequent pyrotechnics selection. 2E xperimental Section Test SamplesSCB manufacture is at ypicalM EMS microelectronics technology,i nvolving the procedures of polysilicon vapor deposition on am onocrystalline silicon substrate, doping phosphorus atoms of high concentrations on the polycrystalline silicon, etching the bridge,s teaming metalized solder, etching welded panel, and scribing. The SCB sample usedi n the test has ac oncentration of 7.7 10 19 phosphorus atoms per cubic centimeter,w ith dimensions of 100 40 mm, thickness of 2 mm, and average resistance of 8.28 W.T he sample is shown in Figure 1, including the diagram of bridge area shown in Figure 1(a) and am icroscope image of the bridgea rea shown...

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Study on the Aging Mechanism of Boron Potassium Nitrate (BKNO3) for Sustainable Efficiency in Pyrotechnic Mechanical Devices

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Light Effect in Semiconductor Bridge Plasma Ignition

“…As mentioned in the Introduction, many researchers consider that heat, via heat-transfer or heat-convection, to be the main energy source of SCB plasma ignition [3]. However, two unusual phenomena were found in our study, which prove that there exist effects in SCB plasma ignition that are not due to heat.…”

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