Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors 2023
DOI: 10.1007/978-3-031-19531-0_17
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II-VI Wide-Bandgap Semiconductor Device Technology: Schottky Barrier, Ohmic Contacts, and Heterostructures

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(2 citation statements)
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“…Therefore, these materials are very useful in the development of thin-film solar cells, radiation detectors, photocatalysts, various optoelectronic devices, photoresistors, LEDs, and phosphors [ 2 , 3 , 4 , 5 , 6 , 7 ]. However, it turned out that II–VI semiconductor compounds, in addition to having excellent luminescent and photoelectric properties, also have interesting surface properties important for gas sensor applications [ 8 , 9 ]. Some parameters of compounds II–VI, important for applications, are given in Table 1 .…”
Section: Ii–vi Semiconductor Compounds and Their Prospects For Gas Se...mentioning
confidence: 99%
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“…Therefore, these materials are very useful in the development of thin-film solar cells, radiation detectors, photocatalysts, various optoelectronic devices, photoresistors, LEDs, and phosphors [ 2 , 3 , 4 , 5 , 6 , 7 ]. However, it turned out that II–VI semiconductor compounds, in addition to having excellent luminescent and photoelectric properties, also have interesting surface properties important for gas sensor applications [ 8 , 9 ]. Some parameters of compounds II–VI, important for applications, are given in Table 1 .…”
Section: Ii–vi Semiconductor Compounds and Their Prospects For Gas Se...mentioning
confidence: 99%
“…✓ But the most important limitation is still the lack of temporal stability of these sensors, especially at elevated temperatures, when there is a drift in the baseline resistance and a decrease in the sensory response over time [ 9 ]. As shown in Figure 8 c, a temporary change in sensory response is observed even when operating at room temperature.…”
Section: Limitationsmentioning
confidence: 99%