III-phosphides heterojunction solar cell interface properties from admittance spectroscopy

Abstract

GaInP solar cell interfaces were characterized by admittance spectroscopy. Admittance spectroscopy is shown to be sensitive to the band structure at the heterojunction interfaces. In particular, a correlation between activation energy of the capacitance step in a capacitance versus temperature plot and effective potential barrier for majority carriers is demonstrated, indicating a new method for the determination of potential barriers at heterointerfaces. Using this technique, the effective potential barrier for holes at the pAl 0.53 In 0.47 P/p-GaAs interface is found to be equal to 0.6 eV. Effects of interface defects and spreading resistance in the emitter of solar cells are illustrated and discussed.

Limiting factors on the semiconductor structure of III-V multijunction solar cells for ultra-high concentration (1000-5000 suns)

“…When electron affinities are used, the resulting band discontinuities are comparable with literature. In the case of the (Al 0.2 Ga 0.8 ) 0.5 In 0.5 P/Al 0.3 Ga 0.7 As band offset, it is calculated by applying Anderson's rule but using the nominal electron affinities taken from , respectively. Shaded rows correspond to barriers for majority carriers, electrons (ΔE c ) or holes (ΔE v ).…”

Interface Properties of GaP/Si Heterojunction Fabricated by PE‐ALD

“…The capacitance of the very thin depletion region in GaP ( C w GaP ) is expected to be large so that the overall capacitance should be more sensitive to the silicon side since both C w GaP and C t GaP are connected in series with the capacitances of the Si side (insert of Figure a). Additionally, a temperature‐dependent conductance G GaP , which is related to the transport activation through a spike of E C at the GaP/Si interface (Figure a), should be taken into account . Thermal activated electron transport over this barrier leads to the shunting of C w GaP , which also makes the overall capacitance more sensitive to the silicon side and increase toward the sum of C w Si and C t c‐Si .…”

Компьютерное Моделирование Наноэлектромеханических Систем Арсенида-Антимонида Галлия

“…Методика построения моделей с алмазоподобной кристаллической решеткой была описана в работе [11,12]. Для построения точной геометрической модели необходимы данные по параметрам кристаллических решеток арсенида и антимонида галлия (a GaAs = 0,565 нм [13][14][15][16][17], a GaSb = 0,609 нм [18]). В качестве исходной структуры была выбрана наночастица, состоящая из 1000 атомов размером 555 элементарных ячеек и наночастица состоящая их 216 атомов размером 333 элементарных ячеек.…”