III–V Compact Lasers Integrated onto Silicon (SOI)

Morthier, Geert; Roelkens, Günther; Thourhout, Dries Van

doi:10.1002/9783527655342.ch5

Cited by 2 publications

(2 citation statements)

References 48 publications

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“…In this respect, Group IV photonics is the key technology, allowing seamless integration of complementary metal‐oxide‐semiconductor (CMOS)‐based electronics with optical components . Since the indirect nature of their bandgap hinders Si and Ge from acting as efficient light emitters, heterogeneous integration and epitaxy of III–V materials on Si are the solutions presently investigated, yielding optically and electrically driven lasers. Recently, solutions based on pure group IV alloys got renewed interest as incorporation of group IV element tin (Sn) in Ge and SiGe has led to (i) the formation of truly Si‐compatible, direct gap GeSn and SiGeSn systems and, (ii) several demonstrations of GeSn optically pumped lasing .…”

Section: Overview On the Main Structural Properties Of The Grown Hete...mentioning

confidence: 99%

Advanced GeSn/SiGeSn Group IV Heterostructure Lasers

et al. 2018

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Growth and characterization of advanced group IV semiconductor materials with CMOS‐compatible applications are demonstrated, both in photonics. The investigated GeSn/SiGeSn heterostructures combine direct bandgap GeSn active layers with indirect gap ternary SiGeSn claddings, a design proven its worth already decades ago in the III–V material system. Different types of double heterostructures and multi‐quantum wells (MQWs) are epitaxially grown with varying well thicknesses and barriers. The retaining high material quality of those complex structures is probed by advanced characterization methods, such as atom probe tomography and dark‐field electron holography to extract composition parameters and strain, used further for band structure calculations. Special emphasis is put on the impact of carrier confinement and quantization effects, evaluated by photoluminescence and validated by theoretical calculations. As shown, particularly MQW heterostructures promise the highest potential for efficient next generation complementary metal‐oxide‐semiconductor (CMOS)‐compatible group IV lasers.

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Section: Overview On the Main Structural Properties Of The Grown Hete...mentioning

confidence: 99%

Advanced GeSn/SiGeSn Group IV Heterostructure Lasers

et al. 2018

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“…Most of the widely used commercial optoelectronic devices are made of direct band-gap group III-V alloys such as InAs, InSb, and GaAs. Costs of such materials are several times bigger than Si [64][65][66][67][68][69][70][71][72][73].…”

Section: Gesn Optoelectronic Applicationsmentioning

confidence: 99%

GeSn alloys fabricated by modified sputtering deposition

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III–V Compact Lasers Integrated onto Silicon (SOI)

Cited by 2 publications

References 48 publications

Advanced GeSn/SiGeSn Group IV Heterostructure Lasers

Advanced GeSn/SiGeSn Group IV Heterostructure Lasers

GeSn alloys fabricated by modified sputtering deposition

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