III-V material growth on electrochemically porosified Ge substrates

Winter, Edward; Schreiber, Waldemar; Schygulla, Patrick; Souza, P. L.; Janz, S.; David, Laurent; Ohlmann, Jens

doi:10.1016/j.jcrysgro.2022.126980

Cited by 21 publications

(9 citation statements)

References 24 publications

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“…Additionally, the freestanding nature of the membranes allows for their direct integration on the structures incompatible with high-quality monocrystalline growth as well as for stacking of materials with large lattice mismatch, which is impossible with conventional heteroepitaxy [21]. The Ge FSM have already proven their potential for thin, high-efficiency solar cells [25][26][27][28], thermophotovoltaics [29], photodetectors [30,31], and biosensing applications [32,33]. The main domains and applications of Ge FSM are illustrated in Figure 1.…”

Section: Introductionmentioning

confidence: 99%

“…Various techniques have been demonstrated for Ge FSM fabrication, including substrate thinning [34], epitaxial liftoff [35,36], Smart cut technology [37], mechanical spalling [38], 2Dassisted epitaxy [39,40], and Germanium-on-Nothing [41,42]. Among them, the porosification lift-off technique has recently received significant attention and development thanks to its potentially high-throughput and cost-effective process [20,25]. This approach involves the formation of a uniform and tunable porous Ge (PGe) layer [43] using electrochemical etching [44][45][46][47], followed by the deposition of a Ge membrane on top of it.…”

Section: Introductionmentioning

confidence: 99%

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Sustainable Production of Ultrathin Ge Freestanding Membranes

Hanuš,

Ilahi,

Cho

et al. 2024

Sustainability

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Germanium (Ge) is a critical material for applications in space solar cells, integrated photonics, infrared imaging, sensing, and photodetectors. However, the corresponding cost and limited availability hinder its potential for widespread applications. However, using Ge freestanding membranes (FSMs) allows for a significant reduction in the material consumption during device fabrication while offering additional advantages such as lightweight and flexible form factor for novel applications. In this work, we present the Ge FSM production process involving sequential porous Ge (PGe) structure formation, Ge membrane epitaxial growth, detachment, substrate cleaning, and subsequent reuse. This process enables the fabrication of multiple high-quality monocrystalline Ge FSMs from the same substrate through efficient substrate reuse at a 100 mm wafer scale by a simple and low-cost chemical cleaning process. A uniform, high-quality PGe layer is produced on the entire recovered substrate. By circumventing the use of conventional high-cost chemical–mechanical polishing or even substantial chemical wet-etching, and by using an optimized PGe structure with reduced thickness, the developed process allows for both cost and an environmental impact reduction in Ge FSMs production, lowering the amount of Ge used per membrane fabrication. Moreover, this process employs large-scale compatible techniques paving the way for the sustainable production of group IV FSMs for next-generation flexible optoelectronics.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Sustainable Production of Ultrathin Ge Freestanding Membranes

Hanuš,

Ilahi,

Cho

et al. 2024

Sustainability

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“…III-V semiconductor materials, known for their superb electrical and optical properties, have garnered significant interest in various fields such as information and communication, semiconductor display and lighting, wearable devices, and aerospace [1]. Recently, indium phosphide (InP) materials have witnessed rapid development in applications such as light-emitting diodes, lasers, high-power radio frequency, photoelectric detection, and solar cells, owing to their remarkable physical attributes such as superior light absorption efficiency, high electron mobility, and exceptional thermal conductivity [2].…”

Section: Introductionmentioning

confidence: 99%

Study on the Influence of Plane Strain on Optical Properties of InP Materials through First-Principles Calculations

Qiao¹,

Zhi²,

Zhang

2023

E3S Web of Conf.

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This research scrutinizes the impact of plane strain on the optical characteristics of Indium Phosphide (InP) employing first-principles methodology, grounded on the Density Functional Theory (DFT). The findings suggest that the peaks of the spectral response curves of the dielectric function, refractive index, extinction coefficient, optical absorption coefficient, and reflection coefficient of InP, when subjected to plane tension strain, shift towards lower energy of electromagnetic wave frequency in the horizontal coordinate. Concurrently, static quantities such as the dielectric coefficient, refractive coefficient, and reflection coefficient of InP demonstrate an upward trend with an increase in the plane tension strain. Intriguingly, the influence of compressive strain on the photoelectric response of InP manifests contrary behavior to that of the tensile strain.

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“…

a potential in wide range of implementations such as energy storage systems, [5][6][7][8][9][10] thermoelectric devices, [11] sensors, [12][13][14] optoelectronics, [15,16] or synthesis of nanocomposite materials. [17][18][19] Moreover, PGe has recently been demonstrated as an efficient virtual substrate for epitaxial growth of detachable Ge membranes [20] and III-V heterostructures with high crystalline quality [21,22] paving the way to direct application in the development of lightweight and flexible photovoltaics and optoelectronics. [23,24] Nevertheless, to bring these applications to the real world, a largescale formation of homogeneous PGe layers with on demand characteristics is necessary.The fabrication of PGe nanostructures was demonstrated using techniques such as thermal reduction of GeO 2 nanoparticles, [25] oxidative polymerization of the deltahedral [Ge 9 ] 4− cluster, [26] spark processing, [27] reduction-alloying-dealloying approach, [28] ion implantation, [29,30] growth by Molecular Beam epitaxy, [15] coupled plasma chemical vapor deposition, [31] metal-assisted chemical etching, [32] lithography and dry etching, [23] and electrochemical etching.

…”

mentioning

confidence: 99%

“…a potential in wide range of implementations such as energy storage systems, [5][6][7][8][9][10] thermoelectric devices, [11] sensors, [12][13][14] optoelectronics, [15,16] or synthesis of nanocomposite materials. [17][18][19] Moreover, PGe has recently been demonstrated as an efficient virtual substrate for epitaxial growth of detachable Ge membranes [20] and III-V heterostructures with high crystalline quality [21,22] paving the way to direct application in the development of lightweight and flexible photovoltaics and optoelectronics. [23,24] Nevertheless, to bring these applications to the real world, a largescale formation of homogeneous PGe layers with on demand characteristics is necessary.…”

mentioning

confidence: 99%

Large‐Scale Formation of Uniform Porous Ge Nanostructures with Tunable Physical Properties

Hanuš

Arias-Zapata

Ilahi

et al. 2023

Adv Materials Inter

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Porous germanium (PGe) nanostructures attract a lot of attention for various emerging applications due to their unique properties. Consequently, there is an increasing need for the development of low‐cost synthesis routes that are compatible with large‐scale production. Bipolar electrochemical etching (BEE) is a widely used solution for producing porous Ge layers. However, the lack of controllable production of large‐scale uniform PGe layers is the limiting factor for mainstream applications. Large‐scale homogeneous PGe layers formation is demonstrated by improving the BEE process. The PGe structures demonstrate excellent homogeneity in thickness and porosity, with a relative variation of below 2% across the 100 mm wafer. Furthermore, this process enables accurate tuning of the PGe's physical properties through variation of the etching parameters. PGe structures with porosity ranging from 40% to 80% and an adjustable thickness, while preserving low surface roughness are demonstrated, giving access to a large variety of PGe nanostructures for a wide range of applications. Ellipsometry and X‐ray reflectivity are employed to measure the porosity and thickness of PGe layers, providing fast and non‐destructive methods of characterization. These findings lay the groundwork for the large‐scale production of high‐quality PGe layers with on‐demand characteristics.

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III-V material growth on electrochemically porosified Ge substrates

Cited by 21 publications

References 24 publications

Sustainable Production of Ultrathin Ge Freestanding Membranes

Sustainable Production of Ultrathin Ge Freestanding Membranes

Study on the Influence of Plane Strain on Optical Properties of InP Materials through First-Principles Calculations

Large‐Scale Formation of Uniform Porous Ge Nanostructures with Tunable Physical Properties

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