1996
DOI: 10.1016/0167-9317(95)00367-3
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III–V Nanoelectronics

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1997
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Cited by 8 publications
(3 citation statements)
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“…Most, importantly the emergence of antimicrobial resistance can be tackled by using these gold and AgNPs [5]. In the physics, the nanoelectronics, nanomechanics, nanophotonics, and nanoionics [6][7][8][9] were as follows; in the chemistry and metallurgy, the nanotopography, nanolithography, self-assembled monolayers, nanowire compositions, nanoenzyme nanodiamonds, and nanoclusters [1,[10][11][12] were as follows, and in the medical science, the compatibility of coexistence with living tissues, productivity, eccentric drug, and drug distribution [13] due to high surface volume ratio of nanoparticles is as follows.…”
Section: Introductionmentioning
confidence: 99%
“…Most, importantly the emergence of antimicrobial resistance can be tackled by using these gold and AgNPs [5]. In the physics, the nanoelectronics, nanomechanics, nanophotonics, and nanoionics [6][7][8][9] were as follows; in the chemistry and metallurgy, the nanotopography, nanolithography, self-assembled monolayers, nanowire compositions, nanoenzyme nanodiamonds, and nanoclusters [1,[10][11][12] were as follows, and in the medical science, the compatibility of coexistence with living tissues, productivity, eccentric drug, and drug distribution [13] due to high surface volume ratio of nanoparticles is as follows.…”
Section: Introductionmentioning
confidence: 99%
“…Nanoelectronics has been considered most in the III-V semiconductors and principally in the Ga(Al)As alloy system where the construction and growth technologies are most established. Additionally, the transport properties of GaAs and the accessibility of very high-quality heterojunctions boost some potentially utilizable phenomena in a dimensional range available to high-performance lithography [2].…”
Section: Introductionmentioning
confidence: 99%
“…Continuous shrinking of the minimum dimension in semiconductor devices provides the opportunity to open up quantum or single-charge effects for novel device functionalities [1]. These effects appear at sufficiently low temperatures and at length scale well below 100 nm.…”
Section: Introductionmentioning
confidence: 99%