III/V-on-Bulk-Si Technology for Commercially Viable Photonics-Integrated VLSI

Shin, Dongjae; Byun, Hyunil; Shim, Dongshik; Cha, Junghwa; Shin, Yong-hwack; Shin, Changyong; Lee, Changbum; Lee, Eunkyung; Jang, Byung Koog; Lee, Jisan; Hwang, Inoh; Kim, Jinmyoung; Son, Kyunghyun; Ha, K. H.; Choo, Hyuck

doi:10.1109/vlsitechnology18217.2020.9265088

Cited by 3 publications

(4 citation statements)

References 3 publications

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“…12(c) shows that this translates to 52 % higher optical powers at 70 ºC. Details of the thermal analyses can be found in the previous reports [36]- [38]. Overall, the III/V-on-BS platform has the optical disadvantage of the higher WG loss, but has the thermal advantage of the lower thermal impedance, providing competitive advantage over the SOI platform in temperature-sensitive applications.…”

Section: Performance Of Iii/v-on-bs Platformmentioning

confidence: 83%

Bulk-Si Platform: Born for DRAM, Upgraded With On-Chip Lasers, and Transplanted to LiDAR

Shin

Byun

Shim

et al. 2022

J. Lightwave Technol.

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The CMOS industry has been expecting silicon photonics to provide photonic and electro-photonic integrated circuits based on the CMOS processes and infrastructures for scalability of incumbent technology evolutions and creation of novel technologies. However, the compatibility with the legacy CMOS has been compromised with the development convenience of early silicon photonics in that the specialty silicon-on-insulator substrates have been widely used as integration platforms. Since this specialty substrate may hinder the photonics integration with legacy volume products later, a legacy-friendly integration platform with a generic bulk-silicon substrate has been developed for better compatibility. This paper overviews the bulk-silicon photonics platform born for DRAM integration, upgraded with III/V-on-bulk-Si lasers, and transplanted to LiDAR applications requiring the virtuous cycle of cost and volume. The photonics integration with DRAM was to resolve the speed-capacity tradeoff in the DRAM interconnects, and technical feasibility as well as lessons learned from the integration attempt are reviewed. The bulk-silicon device performance approaches that of silicon-oninsulator devices with the thermal advantage of ~40-% lower thermal impedance and the optical disadvantage of ~0.4-dB/mm higher waveguide loss. In the LiDAR applications, detection performance up to ~20 m at 20 fps by a single-chip scanner integrating tunable laser, semiconductor optical amplifiers, and optical phased array are presented with future outlooks.

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Section: Performance Of Iii/v-on-bs Platformmentioning

confidence: 83%

Bulk-Si Platform: Born for DRAM, Upgraded With On-Chip Lasers, and Transplanted to LiDAR

Shin

Byun

Shim

et al. 2022

J. Lightwave Technol.

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“…As the III/V portion of the optical mode distribution increases, the optical gain increases but the internal optical loss also increases. The local SOI structure on the BS substrate was implemented through a proprietary solid-phase epitaxy(SPE) process, and its details have been published in the literature [9,10,[25][26][27][28][29]. In the horizontal structure in Fig.…”

Section: Conceptmentioning

confidence: 99%

“…Therefore, recent light source development tends to pursue single-chip integration along with various photonic devices on top of a Si substrate instead of a conventional III/V one. In the incumbent CMOS industry, the integration tendency has been further strengthened so that the generic bulk-Si(BS) substrate is preferred instead of the specialty Si-on-insulator(SOI) substrate for light source development to facilitate future integration with volume CMOS products such as DRAM [25][26][27][28][29]. This paper presents design and verifying experimental results that avoid single-mode instability from the long PS in the III/V-on-BS DFB LD.…”

Section: Introductionmentioning

confidence: 99%

“…We present the change in single-mode stability over super-λ-scale and sub-λ-scale tuning of the PS length with a good agreement between design and measurement, and improved yield with the optimized design. This paper discusses on design and measurement only, because the fabrication processes on the BS substrate have been previously published [25][26][27][28][29]. This paper also focuses on the single-mode performance only, since the general performances including output power, wall plug efficiency(WPE), modulation speed, and thermal resistance have been also previously reported [9,10].…”

Section: Introductionmentioning

confidence: 99%

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Phase shift optimization of III/V-on-bulk-Si DFB LD for single-mode stability

Shin¹,

cha²,

Shin³

et al. 2023

Preprint

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A III/V-on-Bulk-Si DFB laser with a long phase shift section optimized for single-mode stability is presented. The optimized phase shift allows stable single-mode operations up to 20 times a threshold current. This mode stability is achieved by a gain difference between fundamental and higher modes maximized by sub-wavelength-scale tuning of the phase shift section. In SMSR-based yield analyses, the long-phase-shifted DFB laser showed superior performance compared to the conventional λ/4-phase-shifted ones.

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