III–V/Si Hybrid MOS Optical Phase Shifter for Si Photonic Integrated Circuits

Takenaka, Mitsuru; Han, Jae‐Hoon; Bœuf, F.; Park, Jin-Kwon; Li, Qiang; Ho, Chong Pei; Lyu, Dongsheng; Ohno, Shuhei; Fujikata, Junichi; Takahashi, Shigeki; Takagi, Shinichi

doi:10.1109/jlt.2019.2892752

Cited by 39 publications

(11 citation statements)

References 54 publications

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“…Our calculations suggest V π = 3 V for a 1-mm-long linear phase shifter constructed from the BTO–SiN platform with a corresponding power consumption P π ≈ 1 nW (Supporting Information Section 2). A similar power consumption was recently reported for hybrid III–V/silicon linear phase shifters . However, the small band gap of the III–V materials and challenging fabrication route significantly limit the optically transparent window and integration flexibility relative to the hybrid BTO–SiN platform discussed in this work (Table ).…”

Section: Resultssupporting

confidence: 68%

“…A similar power consumption was recently reported for hybrid III−V/silicon linear phase shifters. 35 However, the small band gap of the III− V materials and challenging fabrication route significantly limit the optically transparent window and integration flexibility relative to the hybrid BTO−SiN platform discussed in this work ( Table 1).…”

mentioning

confidence: 99%

“…Reverse-biased devices are generally less power consuming than forward-biased devices, falling on the lower end of the power consumption scale cited above, but can induce large optical propagation losses caused by high doping levels and are generally less suited for tuning due to the small accessible refractive index window. By introducing III–V layers and forming hybrid III–V/silicon phase shifters, these loss issues have recently been significantly improved . However, the delicate process of wafer-bonding III–V layers to silicon waveguides complicates fabrication, while the unavailability of 200 mm InP wafers limits the scalability of the hybrid III–V/silicon devices.…”

mentioning

confidence: 99%

“…By introducing III−V layers and forming hybrid III−V/silicon phase shifters, these loss issues have recently been significantly improved. 35 However, the delicate process of wafer-bonding III−V layers to silicon waveguides complicates fabrication, while the unavailability of 200 mm InP wafers limits the scalability of the hybrid III−V/ silicon devices. Furthermore, the transparency window of hybrid III−V/silicon devices is limited to wavelengths greater than ∼1.3 μm by the III−V layers, in contrast to the large transparent window available in hybrid BTO−SiN devices, which should extend into the visible spectrum.…”

mentioning

confidence: 99%

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Ultra-Low-Power Tuning in Hybrid Barium Titanate–Silicon Nitride Electro-optic Devices on Silicon

et al. 2019

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As the optical analogue to integrated electronics, integrated photonics has already found widespread use in data centers in the form of optical interconnects. As global network traffic continues its rapid expansion, the power consumption of such circuits becomes a critical consideration. Electrically tunable devices in photonic integrated circuits contribute significantly to the total power budget, as they traditionally rely on inherently power-consuming phenomena such as the plasma dispersion effect or the thermo-optic effect for operation. Here, we demonstrate ultra-low-power refractive index tuning in a hybrid barium titanate (BTO)− silicon nitride (SiN) platform integrated on silicon. We achieve tuning by exploiting the large electric field-driven Pockels effect in ferroelectric BTO thin films of sub-100 nm thickness. The extrapolated power consumption for tuning a free spectral range (FSR) in racetrack resonator devices is only 106 nW/FSR, several orders of magnitude less than many previous reports. We demonstrate the technological potential of our hybrid BTO− SiN technology by compensating thermally induced refractive index variations over a temperature range of 20°C and by using our platform to fabricate tunable multiresonator optical filters. Our hybrid BTO−SiN technology significantly advances the field of ultra-low-power integrated photonic devices and allows for the realization of next-generation efficient photonic circuits for use in a variety of fields, including communications, sensing, and computing.

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Section: Resultssupporting

confidence: 68%

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confidence: 99%

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confidence: 99%

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confidence: 99%

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Ultra-Low-Power Tuning in Hybrid Barium Titanate–Silicon Nitride Electro-optic Devices on Silicon

et al. 2019

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“…A MZI intensity modulator using the organic material was operated up to 40 Gbit/s. Moreover, III-V materials can also improve the modulator characteristics [69]. Wafer bonding of InGaAsP using Al2O3 as an intermediate layer has been done, producing a phase shifter with an efficient VπL-product of 1.2 Vmm [70].…”

Section: Functional Materials Integrationmentioning

confidence: 99%

Silicon photonics platforms for optical communication systems, outlook on future developments

Tsuda

2020

IEICE Electron. Express

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This paper reviews recent progress in silicon photonics and compares it with other optical device platforms. The key components for optical communication systems, including arrayed waveguide gratings, optical switches, modulators and optical functional devices fabricated on silicon photonics platforms are explained. The integration of III-V compounds, lithium niobate, polymers, phase change and other functional materials are necessary to strengthen silicon photonics platforms. These are also reviewed, and the feasibilities are discussed. Finally, I express my personal view as to the best research direction for silicon photonics.

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Non‐Volatile Hybrid Optical Phase Shifter Driven by a Ferroelectric Transistor

Tang,

Watanabe,

Fujita

et al. 2023

Laser & Photonics Reviews

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Optical phase shifters are essential elements in photonic integrated circuits (PICs) and function as a direct interface to program the PICs. Non‐volatile phase shifters, which can retain information without a power supply, are highly desirable for low‐power static operations. Here a non‐volatile optical phase shifter is demonstrated by driving a III‐V/Si hybrid metal‐oxide‐semiconductor (MOS) phase shifter with a ferroelectric field‐effect transistor (FeFET) operating in the source follower mode. Owing to the various polarization states in the FeFET, multistate non‐volatile phase shifts up to 1.25π are obtained with CMOS‐compatible operation voltages and low switching energy up to 3.3 nJ. Furthermore, a crossbar array architecture is proposed to simplify the control of non‐volatile phase shifters in large‐scale PICs and verify its feasibility by confirming the selective write‐in operation of a targeted FeFET with a negligible disturbance to the others. This work paves the way for realizing large‐scale non‐volatile programmable PICs for emerging computing applications such as deep learning and quantum computing.

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III–V/Si Hybrid MOS Optical Phase Shifter for Si Photonic Integrated Circuits

Cited by 39 publications

References 54 publications

Ultra-Low-Power Tuning in Hybrid Barium Titanate–Silicon Nitride Electro-optic Devices on Silicon

Ultra-Low-Power Tuning in Hybrid Barium Titanate–Silicon Nitride Electro-optic Devices on Silicon

Silicon photonics platforms for optical communication systems, outlook on future developments

Non‐Volatile Hybrid Optical Phase Shifter Driven by a Ferroelectric Transistor

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