Illuminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperatures

Novo, Carla; Giacomini, Renato; Doria, Rodrigo T.; Afzalian, Aryan; Flandre, Denis

doi:10.1088/0268-1242/29/7/075008

Cited by 22 publications

(7 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The lateral dimension of nanobar is considered as 15 µm while the lateral extents of highly doped p‐type and n‐type regions are set as 0.5 µm. The dopant concentrations in n‐type and p‐type regions are chosen as N = 4 × 10 20 cm −3 and P = 1 × 10 20 cm −3 , respectively, in accordance with empirical values demonstrated in several experiments . The choice of asymmetric doping has been made to yield a more uniform carrier distribution up to 10 19 cm −3 across the intrinsic region by compensating the effect of Auger recombination which becomes prominent for carrier densities higher than 5 × 10 18 cm −3 .…”

Section: Dynamic All‐dielectric Metasurface Doubletmentioning

confidence: 99%

A Dynamically Modulated All‐Dielectric Metasurface Doublet for Directional Harmonic Generation and Manipulation in Transmission

Salary

Farazi

Mosallaei

2019

Advanced Optical Materials

View full text Add to dashboard Cite

metasurface to achieve a certain functionality in reflection or transmission mode. Recent years have witnessed the development of phase-gradient metasurfaces with different configurations for a wide range of applications such as beam-steering, focusing, and holography. [1,2] These structures allow for integration of various functionalities into a flat surface thus leading to a dramatic reduction in the footprint of optical systems by replacing conventional bulky optical components.Spatiotemporal control over the phase of transmitted and reflected lights across the 2π span is the key to achieve the desired functionalities. The phase tuning mechanisms of metasurfaces have been mostly based on varying the size of nanoantennas within the resonant scattering regime or rotating half-wave plate elements to imprint a geometric phase shift on the circularly polarized light scattered with the opposite handedness. [3,4] For a nanoantenna supporting a single isolated electric or magnetic resonance, the maximal resonant phase agility is π which hinders full control over the light wavefront without employing a back mirror. Metasurfaces with both electric and magnetic responses can be used to overcome this limitation via spectrally overlapping [5] and interleaving [6] electric and magnetic resonances for operation in transmission and reflection modes, respectively. The spectral overlap of electric and magnetic dipole resonances in a Huygens' metasurface satisfies the first Kerker condition leading to suppressed backward scattering from the elements thus eliminating the reflection and giving rise to maximal transmission with 2π phase agility. Although Huygens' metasurfaces have been constructed using metallic elements in microwave regime, bringing plasmonic Huygens' metasurfaces into optical frequencies is challenging due to their complex geometries and arrangements, and is further hindered by the significant increase in the ohmic loss of plasmonic materials at higher frequencies. [7] All-dielectric metasurfaces consisted of high-index subwavelength elements embedded in a low-index environment can eliminate these limitations in that they can support both electric and magnetic resonances with simple geometries and do not suffer from significant dissipative losses. [8][9][10] Moreover, they are fully compatible with standard In this paper, an electrically tunable all-dielectric metasurface doublet is proposed operating at mid-infrared frequency regime with dynamic 2π phase span in transmission mode. Each layer of the metasurface consists of a periodic array of silicon nanobars configured into p-i-n junctions in which the double carrier injection into the intrinsic region under forward bias allows for tuning of the silicon refractive index. The physical mechanism is based on the spectral overlap of high quality factor guided mode resonances supported by each constituent layer establishing an extreme Huygens' operation regime of nearly reflectionless transmission with steep phase spectrum. The short response time of field-driven car...

show abstract

Section: Dynamic All‐dielectric Metasurface Doubletmentioning

confidence: 99%

A Dynamically Modulated All‐Dielectric Metasurface Doublet for Directional Harmonic Generation and Manipulation in Transmission

Salary

Farazi

Mosallaei

2019

Advanced Optical Materials

View full text Add to dashboard Cite

show abstract

“…In order to enhance the photo absorption rate, anti reflection coating (ARC) could be used on the top of the device [28][29][30][31][32][33][34].…”

Section: Resultsmentioning

confidence: 99%

Multiple-graphene layer based p⁺⁺–n–n⁻–n⁺⁺ device on Si/3C-SiC (100) substrate: a highly sensitive visible photo-sensor

Modak¹,

Kundu²,

Mukherjee³

2020

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The current paper reports the prospects of a multiple-graphene-layer (MGL) based vertically doped p ++ -n-n --n ++ avalanche photo-sensor in visible wavelength region (300 nm-800 nm). High carrier mobility, intrinsic optical and mechanical properties in graphene at room temperature, have made this material promising for various novel applications. The authors have used an indigenously developed and experimentally verified quantum-corrected field maximum classical drift-diffusion (QCFMCDD) mathematical model for studying the optical characteristics of MGL based p ++ -n-n --n ++ avalanche photo-diode sensor. The validity of the simulator is established through a comparative study between the experimental and analytical observations under similar operating (structural/electrical/thermal) conditions. Additionally, the superiority of the QCFMCDD model over the conventional classical drift-diffusion model is established through this comprehensive study. The analysis reveals that the opto-electrical properties of the device-under-test improve significantly as a result of the incorporation of MGL in the low doped active region. The authors have compared the results with those of a Si/4H-SiC super-lattice avalanche photo-sensor at 500 nm wavelength of incident radiation. It is observed that graphene outperforms its Si/4H-SiC counterpart in terms of photo-responsivity (0.820 A W −1 vs. 0.650 A W −1 ) and quantum efficiency (84% vs. 62%) for optical irradiation with visible laser source. The opto-electrical performance of the 3 × 3 array type graphene photo-sensor is further analyzed and compared with those of its single array counterpart. The photo-responsivity as well as quantum efficiency increases by at least 30% in the case of the 3 × 3 photo-sensor array. In comparison to available photo detectors, reported so far in published literature, the designed photo-sensor shows overall performance betterment in the visible wavelength region. To the best of authors' knowledge, this is the first report on MGL based 3 × 3 array type ultra fast highly sensitive visible avalanche diode photo-sensor.

show abstract

“…In a previous work, it was shown that SOI PIN diodes with 80‐nm‐thick silicon undergo a change in the current generation phenomenon due to the influence on the depletion layer by the application of the back‐gate voltage [18]. For a 20‐nm‐thick silicon layer, a greater influence of the back‐gate biasing can be expected due to the greater capacitive coupling of the structure.…”

Section: Back Gate Biasing and Ground Planesmentioning

confidence: 99%

Suitability of applying ultrathin SOI‐based PIN diodes to photodetection of UV wavelength

Silva,

Doria

2024

Electronics Letters

View full text Add to dashboard Cite

This work intends to investigate the impact of silicon layer thickness and substrate biasing on the UV photodetection efficiency of PIN diodes fabricated with ultra‐thin body and buried oxide (UTBB silicon‐on‐insulator [SOI]) technology, aiming to verify their behaviour on an ultimate commercial technology. UV photodetectors are applied in different fields, such as environmental and biomedical ones, and their implementation in UTBB SOI could enable the design of mixed circuits where data acquisition and processing could be made in the same chip, enhancing systems’ performance. It is shown that a 20‐nm‐thick silicon layer can be applied for UV photodetection and enhanced generated current is obtained when substrate bias is set to guarantee a depletion regime in the entire active layer.

show abstract

Illuminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperatures

Cited by 22 publications

References 26 publications

A Dynamically Modulated All‐Dielectric Metasurface Doublet for Directional Harmonic Generation and Manipulation in Transmission

A Dynamically Modulated All‐Dielectric Metasurface Doublet for Directional Harmonic Generation and Manipulation in Transmission

Multiple-graphene layer based p⁺⁺–n–n⁻–n⁺⁺ device on Si/3C-SiC (100) substrate: a highly sensitive visible photo-sensor

Suitability of applying ultrathin SOI‐based PIN diodes to photodetection of UV wavelength

Contact Info

Product

Resources

About

Illuminated to dark ratio improvement in lateral SOI PIN photodiodes at high temperatures

Cited by 22 publications

References 26 publications

A Dynamically Modulated All‐Dielectric Metasurface Doublet for Directional Harmonic Generation and Manipulation in Transmission

A Dynamically Modulated All‐Dielectric Metasurface Doublet for Directional Harmonic Generation and Manipulation in Transmission

Multiple-graphene layer based p++–n–n−–n++ device on Si/3C-SiC (100) substrate: a highly sensitive visible photo-sensor

Suitability of applying ultrathin SOI‐based PIN diodes to photodetection of UV wavelength

Contact Info

Product

Resources

About

Multiple-graphene layer based p⁺⁺–n–n⁻–n⁺⁺ device on Si/3C-SiC (100) substrate: a highly sensitive visible photo-sensor