2016
DOI: 10.1017/s1551929516000390
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Image Contrast in Energy-Filtered BSE Images at Ultra-Low Accelerating Voltages

Abstract: Scanning electron microscopy (SEM) at ultra-low landing energies reveals information at the topmost layer of the specimen surface, but the backscattered electron image contrast for certain specimens can be unusual. For primary electron energies above 1 keV, backscattered electron (BSE) yields from a specimen increase with increasing atomic number, providing a brighter image for heavier elements. However, at an electron beam energy of 0.2 keV, a reversal occurs; the BSE yield is greater for light elements than … Show more

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