Image quality of a pixellated GaAs X-ray detector

Sun, G.C.; Makham, S.; Bourgoin, J. C.; Mauger, A.

doi:10.1016/j.nima.2006.10.087

Cited by 2 publications

(2 citation statements)

References 3 publications

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“…GaAs photodiodes have been successfully used in many other applications of direct relevance to sXBPMs. The use of GaAs and AlGaAs photodiodes for the detection of soft x-ray photons has been demonstrated earlier [10][11][12][13][14][15][16][17][18]. High power GaAs photovoltaic devices have been employed in optical-to-electrical energy conversion [19,20].…”

Section: Introductionmentioning

confidence: 99%

High power density soft x-ray GaAs photodiodes with tailored spectral response

Donetski

Kucharczyk

Liu

et al. 2022

Semicond. Sci. Technol.

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GaAs photodiode arrays have been designed for non-destructive monitoring of X-ray beam position in soft coherent beamline front ends in synchrotron light sources. A shallow p-on-n junction was employed to reduce the device photocurrent density to optimize the operation with beam power densities up to 20 W/mm2, mainly coming from hard X-rays. With this approach, the photocurrent is primarily defined by the excess carriers generated by low-energy X-ray photons absorbed near the detector surface. The p-n junction structures were grown by Molecular Beam Epitaxy and processed into 64-element linear photodiode arrays. The devices were characterized first in the visible range with a high-power Ar-ion laser and then tested in the soft and hard X-ray regions up to 10 keV at two beamlines of the National Synchrotron Light Source-II. The responsivity was measured to be 0.16 A/W at 0.7 keV and 0.05 A/W at 6 keV in agreement with modeling. At higher X-ray energies the measured responsivity was lower than predicted in the framework of the carrier diffusion model; a possible explanation is discussed.

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Section: Introductionmentioning

confidence: 99%

High power density soft x-ray GaAs photodiodes with tailored spectral response

Donetski

Kucharczyk

Liu

et al. 2022

Semicond. Sci. Technol.

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show abstract

“…Therefore, interest in alternative materials with a higher atomic number 'Z' is continuously growing. Intense research has been carried out to improve the development of wide bandgap compound semiconductor sensors such as GaAs, CdTe, CdZnTe [3][4][5][6]. Cadmium zinc telluride (CZT) is a promising material used in a broad range of applications, including medical imaging, industrial process monitoring, national security, environmental safety, and basic science [7][8][9].…”

Section: Introductionmentioning

confidence: 99%