Imaging and Spectroscopy of Single InAs Self-Assembled Quantum Dots using Ballistic Electron Emission Microscopy

Rubin, M.; Medeiros‐Ribeiro, G.; O'Shea, J.; Chin, M. A.; Lee, E. Y.; Petroff, P. M.; Narayanamurti, V.

doi:10.1103/physrevlett.77.5268

Cited by 87 publications

(26 citation statements)

References 12 publications

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“…Electrically, the detection limit is about 20 fA. This sensitivity makes ''optically detected BEEM'' a very promising technique for studying subsurface resonant states, e.g., in superlattices 19 or self-assembled quantum dots, 20 which in normal BEEM are at or below the detection limit. Finally, it should be noted that in ''optically detected BEEM'' the injected carriers necessarily are minority carriers, whereas in normal BEEM majority carriers are injected, which makes the technique, in this respect, complementary to normal BEEM.…”

Section: CMmentioning

confidence: 99%

Low-temperature scanning-tunneling microscope for luminescence measurements in high magnetic fields

Kemerink

Gerritsen

Hermsen

et al. 2001

Review of Scientific Instruments

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General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. We have designed and built a low-temperature ͑1.3-4.2 K͒ scanning-tunneling microscope which is capable of collecting light that is generated in the tunneling region. Light collection is done by means of two fibers whose cleaved front is in close proximity (Ϸ1 mm͒ to the tunneling region. The whole system can be operated in high magnetic fields ͑11 T͒ without loss of optical signal strength. As a demonstration, we measured the electroluminescence spectra of an InGaAs quantum well at various temperatures. At 4.2 K, we found an electron-to-photon conversion factor that is three orders of magnitude higher than at room temperature.

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Section: CMmentioning

confidence: 99%

Low-temperature scanning-tunneling microscope for luminescence measurements in high magnetic fields

Kemerink

Gerritsen

Hermsen

et al. 2001

Review of Scientific Instruments

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“…With this unique lateral resolution ability, small inhomogeneous features at interfaces, with sizes down the nanometer scale, can be resolved clearly under appropriate conditions: for example, in detecting the homogeneity of interface electronic properties [2], in observing the patterned SiO 2 layers between Au and Si [3], and in measuring the energy band configuration of the buried InAs quantum dots at the Au/GaAs interface [4].…”

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confidence: 99%

Use of ballistic electron emission microscopy to observe the diversity of fabricated nanometer features at the Au/Si interface

Qiu¹,

Shang²,

Wang³

et al. 1998

Applied Physics A: Materials Science & Processing

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This paper examines the feasibility of locally modifying the interface properties of the gold/silicon system using ballistic electron emission microscopy (BEEM). Distinctly different fabricated features have been observed in BEEM images of the Au/Si interface depending on the polarity of the applied voltage pulses. The discrepancy that exists in the modification behavior on specific samples may reveal that the previously proposed adatom terraces and atomic interdiffusion mechanisms are not sufficient to account for all of the observations here.The extensive applications of metal/semiconductor contact in device technology have attracted widespread interest in studying its structural and electronic properties. Up to now, there have been a number of characterization techniques, such as the commonly used photoelectric, capacitance-voltage and current-voltage methods. However, most of these traditional techniques provide only information based on a spatial average over macroscopic dimensions. With the miniaturization of semiconductor devices, there is a practical need to investigate the interface properties at the nanometer scale.Ballistic electron emission microscopy (BEEM) [1], a technique based on the scanning tunneling microscope (STM), has demonstrated its promising ability to study a variety of metal/semiconductor and semiconductor/semiconductor heterojunction interfaces with unprecedentedly high lateral and energy resolutions. With this unique lateral resolution ability, small inhomogeneous features at interfaces, with sizes down the nanometer scale, can be resolved clearly under appropriate conditions: for example, in detecting the homogeneity of interface electronic properties [2], in observing the patterned SiO 2 layers between Au and Si [3], and in measuring the energy band configuration of the buried InAs quantum dots at the Au/GaAs interface [4].

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“…The injected current is then collected by an Ohmic contact at the back side of the semiconductor substrate. BEEM methodology has been previously used in the study of Schottky barriers [9,13], semiconductor density of states [14], resonant transport through semiconductor heterostructures [14] and buried quantum dots [15], and defects at buried interfaces [16].…”

mentioning

confidence: 99%

Confinement-Enhanced Electron Transport across a Metal-Semiconductor Interface

2001

Self Cite

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We present a combined scanning tunneling microscopy and ballistic electron emission microscopy study of electron transport across an epitaxial Pb͞Si͑111͒ interface. Experiments with a self-assembled Pb nanoscale wedge reveal the phenomenon of confinement-enhanced interfacial transport: a proportional increase of the electron injection rate into the semiconductor with the frequency of electron oscillations in the Pb quantum well.

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Imaging and Spectroscopy of Single InAs Self-Assembled Quantum Dots using Ballistic Electron Emission Microscopy

Cited by 87 publications

References 12 publications

Low-temperature scanning-tunneling microscope for luminescence measurements in high magnetic fields

Low-temperature scanning-tunneling microscope for luminescence measurements in high magnetic fields

Use of ballistic electron emission microscopy to observe the diversity of fabricated nanometer features at the Au/Si interface

Confinement-Enhanced Electron Transport across a Metal-Semiconductor Interface

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