Imaging dark charge emitters in diamond via carrier-to-photon conversion

Lozovoi, Artur; Vizkelethy, György; Bielejec, Edward S.; Meriles, Carlos A.

doi:10.1126/sciadv.abl9402

Cited by 12 publications

(8 citation statements)

References 45 publications

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“…The schematic in Figure a lays out our experimental protocol: We first implement multiple 632 nm, 6 mW laser scan across a (80 μm) 2 area to initialize SiVs into a nonfluorescing charge state (Supporting Information, Section II). We subsequently park a 532 nm, 3.6 mW laser at the center of the scanned plane for a variable time t p ; illumination at this wavelength is known to generate a continuous stream of free electrons and holes stemming from charge cycling of coexisting NVs. − The ensuing carrier diffusion and capture produces a nonlocal change of the SiV charge state, which we subsequently image under 632 nm, 50 μW excitation.…”

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Room-Temperature Photochromism of Silicon Vacancy Centers in CVD Diamond

et al. 2023

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The silicon vacancy (SiV) center in diamond is typically found in three stable charge states, SiV0, SiV–, and SiV2–, but studying the processes leading to their formation is challenging, especially at room temperature, due to their starkly different photoluminescence rates. Here, we use confocal fluorescence microscopy to activate and probe charge interconversion between all three charge states under ambient conditions. In particular, we witness the formation of SiV0 via the two-step capture of diffusing, photogenerated holes, a process we expose both through direct SiV0 fluorescence measurements at low temperatures and confocal microscopy observations in the presence of externally applied electric fields. In addition, we show that continuous red illumination induces the converse process, first transforming SiV0 into SiV– and then into SiV2–. Our results shed light on the charge dynamics of SiV and promise opportunities for nanoscale sensing and quantum information processing.

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Room-Temperature Photochromism of Silicon Vacancy Centers in CVD Diamond

et al. 2023

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“…Thereby a dark state is formed, and since the excitation laser is continually injecting carriers, the total fraction of SiV in the SiV − state remains small even with the existence of many SiV. 2,3 We now characterize the temperature-dependent ZPL peak shift for the 10 15 ions/cm 2 shift for the 10 10 ions/cm 2 fluence is also conducted and presented in the Supporting Information. 21 At temperatures below 100 K, the ZPL peak can be resolved into B and C optical transitions.…”

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confidence: 99%

“…We instead ascribe this observation to increased carrier lifetime at low temperature. , A SiV – loses its electron, leading to formation of SiV 0 , the emission of which is not monitored in this work. Thereby a dark state is formed, and since the excitation laser is continually injecting carriers, the total fraction of SiV in the SiV – state remains small even with the existence of many SiV. , …”

Section: Resultsmentioning

confidence: 99%

“…Color centers in diamond are attracting significant research interest with the nitrogen-vacancy (NV) center being the most prominent representative of the group setting records in solid-state-based quantum computation and enabling novel sensing applications. − More recently, group-IV color centers (Si, Ge, Sn, and Pb) are being investigated since they have significantly increased emission into the zero-phonon line (ZPL) paired with high single-photon emission rate. − Furthermore, focused ion beam (FIB) implantation with group-IV ions is readily available, enabling direct implantation into photonic structures and paving the way for scalable quantum circuits. − Heavier representatives of the group-IV color centers may be operable at higher temperatures than their lower mass counterparts, avoiding the need of dilution refrigerators for operation of color-center-based qubits . One issue in moving toward higher mass color centers is the increased damage to the substrate generated during ion implantation.…”

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confidence: 99%

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Effect of Negative Thermal Expansion on the Zero-Phonon Line of Implanted Silicon Vacancy Color Centers in Diamond

Revesz,

Misiara,

Abraham

et al. 2024

ACS Photonics

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The charged silicon vacancy (SiV − ) color center in diamond can be created by focused ion beam (FIB) implantation, allowing deterministic creation of single photon emitters. Here, we create FIB-implanted SiV − color centers in a diamond substrate spanning 8 orders of magnitude of the ion beam fluence. We show that the SiV − zero-phonon line (ZPL) brightness at 4 K is constant with increasing ion beam fluence, while exhibiting slight inhomogeneous broadening. The temperature-dependent ZPL line shift revealed a blue-shift below 70 K that we attribute to the negative thermal expansion of diamond, showing the SiV − ability as a sensitive probe of its host crystal environment. We demonstrate a versatile line shift model constructed on the basis of the Gruneisen parameter description of the thermal expansion coefficient and the electron−phonon interaction.

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“…22 Because every cycle of NV ionization and recombination leads to the successive injection of a free electron and a hole (see level diagram in Figure 1c), this stage in the protocol results in a stream of diffusing carriers, which we exploit to alter the charge state of the twin color center in the pair, namely, NV B or the "target" NV. To probe its charge state after a variable exposure time, we implement a single-shot charge state readout with the help of a low-power, 594 nm laser 23,24 (see Figure S1 of the Supporting Information); all experiments are performed at room temperature.…”

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Detection and Modeling of Hole Capture by Single Point Defects under Variable Electric Fields

et al. 2023

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Understanding carrier trapping in solids has proven key to semiconductor technologies, but observations thus far have relied on ensembles of point defects, where the impact of neighboring traps or carrier screening is often important. Here, we investigate the capture of photogenerated holes by an individual negatively charged nitrogen-vacancy (NV) center in diamond at room temperature. Using an externally gated potential to minimize space-charge effects, we find the capture probability under electric fields of variable sign and amplitude shows an asymmetric-bell-shaped response with maximum at zero voltage. To interpret these observations, we run semiclassical Monte Carlo simulations modeling carrier trapping through a cascade process of phonon emission and obtain electric-field-dependent capture probabilities in good agreement with experiment. Because the mechanisms at play are insensitive to the characteristics of the trap, we anticipate the capture cross sections we observe�largely exceeding those derived from ensemble measurements�may also be present in materials platforms other than diamond.

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Imaging dark charge emitters in diamond via carrier-to-photon conversion

Abstract: Color centers capturing diffusive photo-induced charge carriers reveal otherwise invisible point defects in a crystal.

Cited by 12 publications

References 45 publications

Room-Temperature Photochromism of Silicon Vacancy Centers in CVD Diamond

Room-Temperature Photochromism of Silicon Vacancy Centers in CVD Diamond

Effect of Negative Thermal Expansion on the Zero-Phonon Line of Implanted Silicon Vacancy Color Centers in Diamond

Detection and Modeling of Hole Capture by Single Point Defects under Variable Electric Fields

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