Imaging devices using the charge-coupled concept

New frontiers for infrared

“…The invention of charge coupled devices (CCDs) in 1969 [15] made it possible to start the developing of the "second generation" FPAs detector arrays coupled with on− −focal−plane electronic analogue signal readouts which could multiplex the signal from a very large array of detec− tors. In the middle 70's, while the 1st common module IR arrays were produced, the first CCD IR bi−dimensional ar− rays [16][17] were appearing in USA and, the first smart sensors based on LTT RF sputtered thin films using X-Y addressing read-out were developed in Italy [18,46]. In 1975 the first CCD TV camera was realized and this allo− wed to forecast the "2 nd generation FPAs" capable of a star− ing vision, although the necessity of very high spatial reso− lution and high reliability even in complex structures, with extremely high number of pixels (up to one million pixels), were pushing towards alternative solutions, with materials less difficult than CMT, in the manufacturing process (e.g., extrinsic silicon detectors).…”

Infrared: A Key Technology for Security Systems

“…The invention of Charge Coupled Devices (CCDs) in 1969 [9] made it possible to start the developing of the "second generation" FPAs detector arrays coupled with on-focal-plane electronic analogue signal readouts which could multiplex the signal from a very large array of detectors. In the middle 1970s, while the 1st Common Module IR Arrays were produced, the first CCD IR bidimensional arrays [10,11] were appearing in USA and, the first Smart Sensors based on LTT RF sputtered thin films, using X-Y addressing readout, were developed in Italy [12]. In 1975 the first CCD TV camera was realized and this was allowing to forecast the "2nd generation FPAs" capable of a staring vision, although the necessity of very high spatial resolution and high reliability even in complex structures, with extremely high number of pixels (up to one million pixels), were pushing towards alternative solutions, with materials less difficult than CMT, in the manufacturing process (e.g., extrinsic silicon detectors).…”

Optical image correlation using acoustooptic and charge-coupled devices

“…The CCD image sensor consists of a matrix of photosensitive sites where incident photons are converted to electronic carriers which are trapped locally in the depletion region of a MOS junction. 9 The photogenerated charge packets can be transferred to adjacent pixels along one of the dimensions of the array by applying a clock waveform to the device. When the device is used as an image sensor, each charge packet is shifted continuously along the array after a single exposure to light until it reaches the edge of the device where an output CCD stage transfers the signal to the output pin.…”

“…The astigmatic lens system L 3 images plane P 2 onto the output plane P 3 in the y direction, while it performs the Fourier transform in the horizontal (x) direction. The amplitude of the light at plane P 3 is given by tD(X,,t,n) = rtfSA(fx,t,n)tH(fX, 9) exp(-j27rf~x'dfx)…”