Imaging extended non-homogeneities in HVPE grown GaN with Kelvin Probe Microscopy and photo-etching

Nowak, G.; Weyher, J.L.; Khachapuridze, A.; Grzegory, I.

doi:10.1016/j.jcrysgro.2012.04.025

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Kelvin Probe Force Microscopy Analysis Of P-and N-gan1

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Cited by 5 publications

(2 citation statements)

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“…An AC voltage with adjustable DC offset is applied between a conducting AFM tip and the sample electrode. The resulting electrostatic force is detected by a lock-in amplifier and a feedback circuit controls the dc tip potential until the CPD is compensated [26][27][28]. The contact potential difference is defined as…”

Section: Kelvin Probe Force Microscopy Analysis Of P-and N-ganmentioning

confidence: 99%

Vertical current-flow enhancement via fabrication of GaN nanorod p–n junction diode on graphene

Ryu

Ram

Lee

et al. 2015

Applied Surface Science

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Section: Kelvin Probe Force Microscopy Analysis Of P-and N-ganmentioning

confidence: 99%

Vertical current-flow enhancement via fabrication of GaN nanorod p–n junction diode on graphene

Ryu

Ram

Lee

et al. 2015

Applied Surface Science

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“…Here, the interfacial states between graphene and SiC substrate are investigated. The surface sensitive spectroscopy of Kelvin probe force microscopy (KPFM) is used to measure the surface potential both in dark condition and under UV illumination. The behavior of photogenerated carrier transport can be obtained.…”

Section: Introductionmentioning

confidence: 99%

Modulating the Surface State of SiC to Control Carrier Transport in Graphene/SiC

Jia

Sun

Shi

et al. 2018

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Silicon carbide (SiC) with epitaxial graphene (EG/SiC) shows a great potential in the applications of electronic and photoelectric devices. The performance of devices is primarily dependent on the interfacial heterojunction between graphene and SiC. Here, the band structure of the EG/SiC heterojunction is experimentally investigated by Kelvin probe force microscopy. The dependence of the barrier height at the EG/SiC heterojunction to the initial surface state of SiC is revealed. Both the barrier height and band bending tendency of the heterojunction can be modulated by controlling the surface state of SiC, leading to the tuned carrier transport behavior at the EG/SiC interface. The barrier height at the EG/SiC(000-1) interface is almost ten times that of the EG/SiC(0001) interface. As a result, the amount of carrier transport at the EG/SiC(000-1) interface is about ten times that of the EG/SiC(0001) interface. These results offer insights into the carrier transport behavior at the EG/SiC heterojunction by controlling the initial surface state of SiC, and this strategy can be extended in all devices with graphene as the top layer.

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Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy

Ren

et al. 2013

Journal of Crystal Growth

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Imaging extended non-homogeneities in HVPE grown GaN with Kelvin Probe Microscopy and photo-etching

Cited by 5 publications

References 23 publications

Vertical current-flow enhancement via fabrication of GaN nanorod p–n junction diode on graphene

Vertical current-flow enhancement via fabrication of GaN nanorod p–n junction diode on graphene

Modulating the Surface State of SiC to Control Carrier Transport in Graphene/SiC

Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy

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