We quantitatively study interfacial adhesion in a two-layer membrane system consisting of Al and Si with femtosecond time-resolved laser spectroscopy. High-frequency acoustic pulses in the sub-THz regime are utilized to characterize the membrane system. In order to explain the distinct features of the measured data, a spring model for the Al/Si interface is employed. We show that acoustic dissipation in this system needs to be included for accurate modeling of the interface adhesion over a broad frequency range. This modeling approach yields a spring constant of h = -17 Al Si -kg nm s 2 2 , an acoustic phonon lifetime of t = 68 Al ps at 240 GHz in polycrystalline Al and a frequency dependence of the lifetime in Si w µ -1 in thefrequency range from 50-800 GHz.Heat dissipation in Si is central to the operation of semiconductor devices [1-3]. This becomes even morechallengingdue to the miniaturization of all components as the contribution ofthe boundaries to phonon scattering becomes larger [4][5][6]. The question of understanding and controlling thermal phonons is of major interest [7][8][9]. Quantitative values forintrinsic phonon-phonon scattering processes and extrinsic scattering processes due to defects and surface/interface roughness are still under investigation [10][11][12]. While there exista wide variety of tools for the spatial mapping of temperature [13,14], there are not many temporal techniques for measuring nonequilibrium heat transport. One way is to look at coherent acoustic phonons at frequencies that contributeto the spectrum of thermal phonons [15]. Picosecond laser ultrasonics [16,17] is known to bea powerful tool for the characterization of the elastic properties of thin films. Sub-nanometer thick interfacial layers separating thin films from the substrate can influence both the decay time of the thin film vibration [18] and propagation of the coherent acoustic pulses [19]. Later it was demonstrated thatthe quantitative evaluation of the thickness of broad interfacial layers [20][21][22][23][24] and the rigidity of thin interfacial bonds [2, 25-29] can be obtained. Here, we study interfacial adhesion as well as damping behaviorin two-layer Al/Si-membranes. As a quantitative measure for the interface adhesion, the spring constant of a massless spring model is determined [25].The investigated system is a 13 nm thick Al film on top of a 350 nm thick Si membrane (see figure 1(a)). Details regarding the fabrication of the membrane are given in [27]. In [27], Al films with different thicknesses were fabricated by sputtering deposition on the membranes, which led tostrong adhesion between both layers. Here, in contrastto this approach, the Al film was thermally evaporated,resultingin reduced interface adhesion. The measurements were conducted with an 800 MHz Ti:sapphire pump-probe setup, utilizing the asynchronous optical sampling principle. Further details regarding the setup are given in [27,30]. We impulsively excite the Al film with an fs-laser pump pulse (30 mW power, 790 nm wave...