2005
DOI: 10.1007/s11664-005-0043-3
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Imaging one-dimensional and two-dimensional planar photodiode detectors fabricated by ion milling molecular beam epitaxy CdHgTe

Abstract: Imaging one-dimensional (1-D) and two-dimensional (2-D) arrays of midwavelength infrared (MWIR) and long-wavelength infrared (LWIR) planar photodiodes were fabricated by ion milling of vacancy-doped molecular beam epitaxy Cd x Hg 1Ϫx Te layers. Sixty-four-element 1-D arrays of 26 ϫ 26 µm 2 or 26 ϫ 56 µm 2 diodes were processed. Zero-bias resistance-area values (R 0 A) at 77 K of 4 ϫ 10 6 Ωcm 2 at cutoff wavelength λ CO ϭ 4.5 µm were measured, as well as high quantum efficiencies. To avoid creating a leakage cu… Show more

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Cited by 10 publications
(1 citation statement)
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“…Planar photodiodes with high dynamic resistance and good quantum efficiency were fabricated by ion-milling vacancydoped mid-wave infrared (MWIR) and long-wave infrared (LWIR) layers. 4,7,8 Recently, growth of various nanostructures has been investigated. The small effective electron mass of HgCdTe (minimum about 0.02m 0 for Hg 0.66 Cd 0.34 Te) leads to a quantum upshift for larger structures than in other materials and enables size-tunable electrical and optical properties.…”
Section: Introductionmentioning
confidence: 99%
“…Planar photodiodes with high dynamic resistance and good quantum efficiency were fabricated by ion-milling vacancydoped mid-wave infrared (MWIR) and long-wave infrared (LWIR) layers. 4,7,8 Recently, growth of various nanostructures has been investigated. The small effective electron mass of HgCdTe (minimum about 0.02m 0 for Hg 0.66 Cd 0.34 Te) leads to a quantum upshift for larger structures than in other materials and enables size-tunable electrical and optical properties.…”
Section: Introductionmentioning
confidence: 99%