Imaging performance optimization for hyper-NA scanner systems in high volume production

Kerkhof, Mark van de; Setten, Eelco van; Engelen, André; Plachecki, Vincent; Liu, Huayu; Schmitt-Weaver, Emil; Rooijakkers, W.; Simon, Klaus

doi:10.1117/12.773260

Cited by 4 publications

(3 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…So, in this paper, we focus chrome-less PSM, the resolution limit for frequency doubling is studied using aerial image simulation. Considering wafer CDU budget, we refer phase error road map 6 and reticle CDU contribution breaking down [10][11] , then the relationship between phase error and wafer CDU is setup, finally, the phase error tolerance is proposed using simulation. We also extend the relationship between phase error tolerance to smaller pitch with polynomial fitting method taking data of Wu's.…”

Section: Introductionmentioning

confidence: 99%

Frequency doubling and phase error tolerance exploration for chrome-less phase shift mask

Li¹,

Jiang²,

Dian-nong³

et al. 2023

Optical and EUV Nanolithography XXXVI

View full text Add to dashboard Cite

As increasing complexity of1 devices and scaling have continued to push the lithography to low k1 limit, lithographic scientists have been developing various resolution enhancement techniques (RET) to extend 193nm immersion lithography. Chrome-less phase shift mask (PSM) is one of the RET techniques which can produce frequency doubling to half the pitch. The shifter is changed from MoSi to quartz for chrome-less PSM. And the shifter in quartz that is challenging to control at mask etch process. This will cause phase error, lead to image shift and CD asymmetry impacts wafer CD uniformity (CDU) due to intensity imbalance. In this paper, based on aerial image simulations, the conditions to generate frequency doubling have been studied, the resolution limit of the frequency doubling has been investigated. The phase error tolerance of frequency doubling for accepted wafer CDU referring ITRS road map plus budget breakdown to reticle CDU contribution has been studied. The phase error tolerance for smaller pitch is predicted with polynomial fitting extend too.

show abstract

Section: Introductionmentioning

confidence: 99%

Frequency doubling and phase error tolerance exploration for chrome-less phase shift mask

Li¹,

Jiang²,

Dian-nong³

et al. 2023

Optical and EUV Nanolithography XXXVI

View full text Add to dashboard Cite

show abstract

“…[8][9][10] Device scaling and lithographic processing limits are also significant challenges, but will not be reviewed in this paper. Significant efforts in the migration to immersion tooling 12 recently gained >40% improvements in the potential resolution limits, but progress here has also now ceased. In Fig.…”

Section: Introductionmentioning

confidence: 99%

Computational lithography: Exhausting the resolution limits of 193-nm projection lithography systems

Melville¹,

Rosenbluth²,

Waechter³

et al. 2011

Journal of Vacuum Science & Technology B, Nanotechnology an

View full text Add to dashboard Cite

Articles you may be interested inAnalysis and optimization approaches for wide-viewing-angle λ/4 plate in polarimetry for immersion lithographyIn the recent past, scaling of semiconductor fabrication systems has been dominated by wavelength and numerical aperture modifications. This is now no longer the case for 193-nm immersion projection lithography (193i) systems as there are no technical paths for continued benefit from the in these areas. Instead, a range of techniques including patterning processes and system optimization are being used to push the limits of the system. This paper will review the elements that are now driving scaling for a system of fixed wavelength and numerical aperture.

show abstract

“…The highest optical half pitch resolution available therefore becomes 36 nm 2) for water-based immersion, numerical aperture 1.35, using polarized dipole illumination at a wavelength of 193 nm. Clearly, for optical lithography to capture 32 nm (half pitch) node lithography and beyond, some further innovation is required.…”

Section: Introductionmentioning

confidence: 99%

Progress in Extending Immersion Lithography for the 32 nm Node and Beyond

Sewell¹,

Chen²,

Finders

et al. 2009

jjap

View full text Add to dashboard Cite

Weak localization, a semiclassical process established in disordered systems, has recently been used as an experimental probe of the classical dynamics of ballistic cavities. Through a systematic study of the classical and quantum behaviour of three ballistic cavities featuring large width to length aspect ratios, we highlight the important role of the entrance and exit leads. We present a novel ballistic weak localization process in which the contributing classical trajectories pass directly between the entrance and exit leads and are not shaped by the walls of the cavity but purely by the profiles of the leads. This demonstration of a small section of a cavity supporting a 'local' weak localization process has important implications for studies which relate cavity geometry to the dynamics it supports.

show abstract

Imaging performance optimization for hyper-NA scanner systems in high volume production

Cited by 4 publications

References 3 publications

Frequency doubling and phase error tolerance exploration for chrome-less phase shift mask

Frequency doubling and phase error tolerance exploration for chrome-less phase shift mask

Computational lithography: Exhausting the resolution limits of 193-nm projection lithography systems

Progress in Extending Immersion Lithography for the 32 nm Node and Beyond

Contact Info

Product

Resources

About