Imaging Spin Transport in Lateral Ferromagnet/Semiconductor Structures

Crooker, S. A.; Furis, Madalina; Lou, Xudong; Adelmann, Christoph; Smith, D. L.; Palmstrøm, C. J.; Crowell, P. A.

doi:10.1126/science.1116865

Cited by 318 publications

(298 citation statements)

References 25 publications

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“…In the Datta-Das device, the spinpolarized current which flows in the semiconductor channel, often supposed as a 2-dimensional electron gas (2DEG), is manipulated by electrostatic gate-action, hence providing electrical control of the source-drain current in addition to that provided by the relative alignment of the ferromagnetic contacts. To this end, imaging of the injected spin-polarization from Fe into n-GaAs has been performed in a lateral geometry by Crooker et al 11 and in a cross-sectional geometry by Kotissek et al 12 , whilst Lou et al 13 and Lou et al 14 have demonstrated all-electrical measurements of spin-injection, -transport and -detection in a single Fe/GaAs(001) device. Garlid et al 15 have also used Fe/InGaAs(001) contacts to measure the transverse spin-current generated via the spin-Hall effect.…”

Section: Introductionmentioning

confidence: 99%

Interface Magnetism in Ferromagnetic Metal–compound Semiconductor Hybrid Structures

Hindmarch

2011

SPIN

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Interfaces between dissimilar materials present a wide range of fascinating physical phenomena. When a nanoscale thin-film of a ferromagnetic metal is deposited in intimate contact with a compound semiconductor, the properties of the interface exhibit a wealth of novel behavior, having immense potential for technological application, and being of great interest from the perspective of fundamental physics. This article presents a review of recent advances in the field of interface magnetism in (001)-oriented ferromagnetic metal/III–V compound semiconductor hybrid structures. Until relatively recently, the majority of research in this area continued to concentrate almost exclusively on the prototypical epitaxial Fe / GaAs (001) system: now, a significant proportion of work has branched out from this theme, including ferromagnetic metal alloys, and other III–V compound semiconductors. After a general overview of the topic, and a review of the more recent literature, we discuss recent results where advances have been made in our understanding of the physics underpinning magnetic anisotropy in these systems: tailoring the terms contributing to the angular-dependent free-energy density by employing novel fabrication methods and ferromagnetic metal electrodes.

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Section: Introductionmentioning

confidence: 99%

Interface Magnetism in Ferromagnetic Metal–compound Semiconductor Hybrid Structures

Hindmarch

2011

SPIN

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“…So far, various schemes have been demonstrated to generate and detect spin current in nonmagnetic semiconductors, which include electrical and optical means [2][3][4][5][6][7][8][9][10] . Spin pumping is known as a method to generate a pure spin current without a net flow of charge current in nonmagnetic materials adjacent to a ferromagnetic layer under ferromagnetic resonance (FMR).…”

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confidence: 99%

Direct-current voltages in (Ga,Mn)As structures induced by ferromagnetic resonance

2013

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Spin pumping is the phenomenon that magnetization precession in a ferromagnetic layer under ferromagnetic resonance produces a pure spin current in an adjacent non-magnetic layer. The pure spin current is converted to a charge current by the spin-orbit interaction, and produces a d.c. voltage in the non-magnetic layer, which is called the inverse spin Hall effect. The combination of spin pumping and inverse spin Hall effect has been utilized to determine the spin Hall angle of the non-magnetic layer in various ferromagnetic/non-magnetic systems. Magnetization dynamics of ferromagnetic resonance also produces d.c. voltage in the ferromagnetic layer through galvanomagnetic effects. Here we show a method to separate voltages of different origins using (Ga,Mn)As/p-GaAs as a model system, where sizable galvanomagnetic effects are present. Neglecting the galvanomagnetic effects can lead to an overestimate of the spin Hall angle by factor of 8, indicating that separating the d.c. voltages of different origins is critical.

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“…In recent years, several studies have been performed on epitaxial growth of FM metal thin film on III-V and IV group SCs. [2][3][4][5][6][7] For such type of devices, transition metals and their alloys are of great interest. Among various types of transition metals and alloys, CoFe magnetic alloy is of interest due to its soft magnetic properties.…”

Section: Introductionmentioning

confidence: 99%

Magnetic, morphological and structural investigations of CoFe/Si interfacial structures

Kumar

Srivastava

2014

Journal of Experimental Nanoscience

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CoFe/Si interfacial structures have been realised by electron beam evaporation of CoFe magnetic alloy on p-and n-Si substrates. These realised interfacial structures have been characterised from X-ray diffraction (XRD), atomic force microscopy (AFM), magnetic force microscopy (MFM) and magnetisation (M-H) characteristics. XRD data have shown the presence of CoFe (bcc phase) and b-FeSi 2 phases for CoFe/p-Si interfacial structures, whereas CoFe/n-Si interfacial structures have shown the presence of CoFe (bcc and fcc) phases along with Fe 3 Si, e-FeSi and b-FeSi 2 silicide phases having nanodimension crystallites. The M-H characteristics have shown the superparamagnetic type behaviour for CoFe/p-Si structure, whereas CoFe/n-Si structure shows a feature of interfacial antiferromagnetic (AF) coupling. The observed magnetic behaviour has been understood due to the presence of various magnetic phases and their nanosized grains. The MFM data of domain size have also been correlated with the observed magnetic behaviour. CoFe/n-Si structures have shown a significant feature of giant magnetoresistance (GMR) as compared to CoFe/p-Si structures. It has been found that CoFe/p-Si structures show a distinctly different behaviour than CoFe/n-Si structures for their chemical structure, morphology and magnetic behaviour.

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Imaging Spin Transport in Lateral Ferromagnet/Semiconductor Structures

Cited by 318 publications

References 25 publications

Interface Magnetism in Ferromagnetic Metal–compound Semiconductor Hybrid Structures

Interface Magnetism in Ferromagnetic Metal–compound Semiconductor Hybrid Structures

Direct-current voltages in (Ga,Mn)As structures induced by ferromagnetic resonance

Magnetic, morphological and structural investigations of CoFe/Si interfacial structures

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