2013
DOI: 10.1063/1.4812835
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Imaging the local ideality factor by contactless photoluminescence measurement

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Cited by 24 publications
(9 citation statements)
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“…But these studies had a different purpose than our study. In several investigations the measurements were performed on finished solar cells or the goal was to determine the recombination activity of grain boundaries or the radiative recombination coefficient . In another study an approach similar to ours was used to differentiate between bulk and interface recombination.…”
Section: Introductionmentioning
confidence: 99%
“…But these studies had a different purpose than our study. In several investigations the measurements were performed on finished solar cells or the goal was to determine the recombination activity of grain boundaries or the radiative recombination coefficient . In another study an approach similar to ours was used to differentiate between bulk and interface recombination.…”
Section: Introductionmentioning
confidence: 99%
“…We combine luminescence measurements with detailed balance calculations to create maps of the following parameters which link directly to PV performance losses: QFLS at open circuit, which is closely linked to V OC loss; charge collection quality, a metric linked to J SC loss; and the ideality factor n , which encodes information about the dominant recombination mechanism in the material. The QFLS and ideality factor maps are produced in this work using adaptations of methods previously reported. The luminescence-derived charge collection quality as a metric for short circuit current loss will be justified and experimentally validated in a later section.…”
mentioning
confidence: 99%
“…They are used across the entire value chain including silicon bricks, [ 18 ] wafers, [ 16 ] cells, [ 19 ] and modules, [ 20,21 ] significantly contributing to process optimization of silicon PV devices. A wide range of electrical parameters have been quantified and spatially resolved, including implied open‐circuit voltage (i V OC ), [ 22 ] ideality factor, [ 23 ] dark saturation current–density ( J 0 ), [ 24,25 ] shunt resistance, [ 26–28 ] series resistance ( R s ), [ 24,29–32 ] and others. [ 15,33 ]…”
Section: Introductionmentioning
confidence: 99%