2018
DOI: 10.1007/s10854-018-9442-0
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IMC growth behavior along c-axis of Sn grain under current stressing

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Cited by 5 publications
(2 citation statements)
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“…Meanwhile, the atomic flux deviation from the c-axis is very limited, and the UBM dissolution and IMC formation seldom occur along the c-axis. Similar results in the solder joints with Cu UBMs were also observed in [ 72 , 73 , 74 ]. Moreover, in the Sn-Pb solder microbump, when the electromigration test was carried out at −196 °C, the anisotropic migration of the Pb did not occur.…”
Section: Effect Of Sn Grain Orientation On Electromigrationsupporting
confidence: 87%
“…Meanwhile, the atomic flux deviation from the c-axis is very limited, and the UBM dissolution and IMC formation seldom occur along the c-axis. Similar results in the solder joints with Cu UBMs were also observed in [ 72 , 73 , 74 ]. Moreover, in the Sn-Pb solder microbump, when the electromigration test was carried out at −196 °C, the anisotropic migration of the Pb did not occur.…”
Section: Effect Of Sn Grain Orientation On Electromigrationsupporting
confidence: 87%
“…In particular, many studies have focused on nanowires made of III-V semiconductors because the band gap energy in these materials can be controlled by alloy composition [5,6]. One challenge in growing multicomponent heterostructures, such as InGaAs, AlGaAs, and GaAsSb, is that these alloys have a miscibility gap in their phase diagrams and therefore at equilibrium these alloys phase separate [7]. During growth process, phase separation can be kinetically inhibited for most III-V semiconductors because of the relatively low growth temperatures.…”
Section: Introductionmentioning
confidence: 99%