Immersion exposure tool for 45-nm HP mass production

Kubo, Hiroaki; Hata, Hideo; Sakai, Fumio; Deguchi, Nobuyoshi; Iwanaga, Takehiko; Ebihara, Takeaki

doi:10.1117/12.711360

Cited by 5 publications

(3 citation statements)

References 4 publications

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“…The surface tension and viscosity of water are 72 mN/m and 1 mPa•s, respectively. This extremely high surface tension and low viscosity enable the immersion nozzle to keep water under a final lens (Kubo et al, 2007). On the other hand, it has been reported that a G2 fluid is easy to remain on a wafer (Sewell et al, 2007).…”

Section: Residual Fluid On a Wafermentioning

confidence: 99%

Recent Advances in Nanofabrication Techniques and Applications

Cui¹

2011

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Recent Advances in Nanofabrication Techniques and ApplicationsRecent Advances in Nanofabrication Techniques and Applications Electron Beam Lithography for Fine Dot Arrays with Nanometer-Sized Dot and Pitch 9 EB-drawing system [7]I have already reported key technologies which enable ultrahigh packing over 1 Tb/in 2 : (1) the use of an EB drawing system with a fine probe and large probe current, (2) the thinning of the resist to prevent the spread of incident electron scattering in the resist, and (3) the design of a highly packed pattern with a hexagonal or centered rectangular lattice structure to avoid the proximity effect (Fig. 3. 1). The EB drawing system consists of a HR-SEM (JSM6500F, JEOL, Ltd.) and a writing controller (Tokyo Technology Co., Ltd.) (Fig. 3. 2). The drawing was done on a resist coating on a piece of Si placed on the XY table, which was not moved during the EB writing. This type system is very suitable for checking the limit of the drawing pattern size, because the stage position error can be neglected. The system provides a high probe current of 2 nA at a resolution of 2 nm. We used the system under a probe current of 100 pA and an acceleration voltage of 30 kV. In the drawing, the address resolutions were 10 nm and 2.5 nm for ZEP520 and calixarene [14, 15] resists, respectively. Development was carried out using the commercial developers ZED-N50 (MIBK+IPA) and ZEP-RD (xylene) for 210 sec and 180 sec for ZEP520 and calixarene, respectively. In particular, we adjusted the focus to get the fine probe on the sample surface at a magnification of 250k-200k. In order to achieve 1-Tb/in 2 storage patterned media, we carried out experiments to confirm whether EB writing can form very fine pit or dot arrays with a pitch of <60 nm or not. At first, we coated the resist on a piece of Si substrate with a thickness of 70 nm and 15 nm in ZEP520 and calixarene, respectively. After pre-baking, we drew ultrahigh-packed pit and dot patterns with a pitch of 20-60 nm. After developing and rinsing the resists, we checked the drawn patterns using the same HR-SEM. Thinning allows not only to prevent electron scattering extension in the resist, but also to avoid electron charging. We determined the minimum thickness at which there is sufficient contrast and no damage to the resist during SEM observation. The thickness of 70 nm in ZEP520 resist was decided by electron damage and contrast signal in SEM. I could not obtain the high magnitude SEM image in a thickness range of less than 70 nm.Recent Advances in Nanofabrication Techniques and Applications 10 3.2 EB drawing [7, 13] 3.2.1 Using ZEP520 positive EB resist Figure 3.3 shows SEM images of ZEP520 pit patterns drawn at an exposure dosage of around 180 C/cm 2 . The figure shows that the minimum pit arrays were drawn with a minimum pit diameter of <20 nm at a pitch of 40 nm x 60 nm [13]. We could not form higherpacked pit patterns than this. Furthermore, the pit size drastically changed, with a fluctuation of about 18 nm in this pitch arrays pattern and about 11 ...

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Section: Residual Fluid On a Wafermentioning

confidence: 99%

Recent Advances in Nanofabrication Techniques and Applications

Cui¹

2011

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“…This extremely high surface tension and low viscosity enable our liquid-film-flow nozzle to keep the immersion water under a final lens. 13) On the other hand, it has been reported that it is difficult to keep a G2 fluid under a final lens because of the low surface tension and the high viscosity.…”

Section: Residual Fluid On a Wafermentioning

confidence: 99%

Feasibility Study on Immersion System Using High-Index Materials

Sakai

Iwasaki

Mori

et al. 2008

jjap

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A class of Riemann-Cartan Gödel-type spacetimes are examined in the light of equivalence problem techniques. The conditions for local spacetime homogeneity are derived, generalizing previous works on Riemannian Gödel-type spacetimes. The equivalence of Riemann-Cartan Gödel-type spacetimes of this class is studied. It is shown that they admit a five-dimensional group of affine isometries and are characterized by three essential parameters , m 2 , ω: identical triads ( , m 2 , ω) correspond to locally equivalent manifolds. The algebraic types of the irreducible parts of the curvature and torsion tensors are also presented.

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“…This extremely high surface tension and low viscosity enable the immersion nozzle to keep water under a final lens (Kubo et al, 2007). On the other hand, it has been reported that a G2 fluid is easy to remain on a wafer (Sewell et al, 2007).…”

Section: Residual Fluid On a Wafermentioning

confidence: 99%

High-Index Immersion Lithography

Sakai¹

2011

Recent Advances in Nanofabrication Techniques and Applications

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Immersion exposure tool for 45-nm HP mass production

Cited by 5 publications

References 4 publications

Recent Advances in Nanofabrication Techniques and Applications

Recent Advances in Nanofabrication Techniques and Applications

Feasibility Study on Immersion System Using High-Index Materials

High-Index Immersion Lithography

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