2012
DOI: 10.1016/j.microrel.2011.12.030
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Immunity against temperature variability and bias point invariability in double gate tunnel field effect transistor

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Cited by 5 publications
(3 citation statements)
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“…where BTBT Á B_KANE = 2.3 Â 10 7 V/(cm eV 3/2 ) was used in these simulations, maintaining for the other parameters the default values used in the Atlas simulator [9]. E g is the bandgap and F is the electric field.…”
Section: Analysis and Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…where BTBT Á B_KANE = 2.3 Â 10 7 V/(cm eV 3/2 ) was used in these simulations, maintaining for the other parameters the default values used in the Atlas simulator [9]. E g is the bandgap and F is the electric field.…”
Section: Analysis and Discussionmentioning
confidence: 99%
“…The study of the temperature influence on the TFETs performance is mainly based on the band to band tunneling [5,9], which is the main transport mechanism of these devices. However, the temperature influence on off-state current and on its components must be also investigated in order to obtain a better understanding of the TFETs behavior as a function of temperature.…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, the proposed device architecture i.e. DMG H-D TFET exhibits g m /I ds value of 45.6 V -1 at V gs = 0.1 V for V ds = 1.0 V. Hence it can outperform conventional MOSFETs in analog circuit applications as they suffer from a fundamental limitation of g m /I ds = 40 V -1 [11] [12]. …”
Section: Dmg Hetro-dielectric Tunnel Fetmentioning
confidence: 99%