Impact ionisation in multilayered heterojunction structures

Avalanche noise characteristics of single Al/sub x/Ga/sub 1-x/As(0.3<x<0.6)-GaAs heterojunction APDs

“…Noise was shown to increase with increasing aluminum mole fraction, in disagreement with the arguments of Chin et al [2]. The increase in noise is explained in terms of an increase in hole ionization in the Al Ga…”

“…4-6. The claims by Chin et al [2], and by others [3]- [7] that heterojunctions could be used in avalanche regions to reduce excess noise by tailoring the ratio via the band-edge discontinuity, have not been borne out [8]- [17]. Indeed, increasing the aluminum fraction above and hence band-edge discontinuity actually increases excess noise, as shown in Figs.…”

“…The use of heterojunctions in avalanche regions as a means of reducing excess noise was first proposed by Chin et al [2], who argued that that an electron (hole) which gains energy from a band-edge discontinuity would ionise with an enhanced ionization coefficient . Choice of the layer heterostructure could therefore influence the value of which controls the degree of noisy feedback processes [1].…”

“…Campbell et al [19]- [23] measured avalanche noise in submicron III-V heterojunctions and demonstrated impressive reductions in excess noise, in one case achieving an excess noise factor as low as at a multiplication, [19]. Modeling by Hayat et al [24] later suggested that low noise could be achieved in heterojunction APDs without invoking the heterojunction-enhanced ionization coefficients proposed by Chin et al [2], in agreement with Herbert et al [18] and Campbell et al [19]- [23].…”

Counting distributions and error probabilities for optical receivers incorporating superlattice avalanche photodiodes

“…This would open the way to sr6 d l high-quantum efficiency low-voltage low-noise detecti)rs in the near infrared. The first such proposal, by Chin et al [7], suggested the use of a multiquantum-well superlattice avalanche photodiode (SAPD) consisting of an 31-ternating series of wide-and narrow-bandgap layers. It has been shown both experimentally [SI- [lo], and tly means of many-particle Monte Carlo simulations [ 1 !…”