Impact Ionization Coefficients in $\hbox{Al}_{0.52} \hbox{In}_{0.48}\hbox{P}$

Abstract

Electron and hole multiplication characteristics have been measured on a series of Al 0.52 In 0.48 P p + -i-n + and n + -i-p + homojunction diodes with nominal avalanche region thicknesses ranging from 0.22 to 1.03 µm. From these, the electron and hole impact ionization coefficients are deduced over an electric-field range from 530 to 990 kV/cm. The results suggest that the electron ionization coefficient is larger than the hole ionization coefficient, particularly at lower electric fields. Extremely low dark currents were obtained, and there was no evidence of any tunneling dark current even at electric fields of approximately 1.0 MV/cm. From these ionization coefficients, we deduce that the breakdown voltage in Al 0.52 In 0.48 P is almost 2.5× greater than that of GaAs and 4.5× lower than that of GaN.

Characterisation of Al0.52In0.48P mesa p-i-n photodiodes for X-ray photon counting spectroscopy

“…These values are comparable with previously reported high quality Al 0.52 In 0.48 Pp þ -i-n þ photodiodes having 1.03 lm i-layer thickness. 23 The reported leakage current was lower than GaAs (1.08 nA/cm 2 at 22 kV/cm) 2 and Al 0.8 Ga 0.2 As (4.72 nA/cm 2 at 29 kV/cm) 24 detectors at similar electric fields and temperatures. The Al 0.52 In 0.48 Pdark current density was greater than for some previously reported SiC detectors ($1 pA/cm 2 at 103 kV/cm) 3 at similar electric field and temperatures.…”

“…where e 0 is the permittivity of the vacuum, e r is the Al 0.52 In 0.48 P dielectric constant (11.25 23 ), and A is the device area. 28 ; this value increased to (3.5 6 0.4) Â 10 17 cm…”

Temperature study of Al0.52In0.48P detector photon counting X-ray spectrometer

“…Furthermore, Al0.52In0.48P is expected to have a reduced likelihood of damage from radiation and has been shown to present lower thermally-generated leakage currents than alternative narrow and wide bandgap materials (e.g. Silicon and AlGaAs) allowing operation at room temperature and above without cooling systems [4,5], potentially this may result in cost savings due to reduced mass, volume and power requirements for such instruments. Because of its good linear attenuation coefficients as a consequence of the presence of Indium (atomic number 49), Al0.52In0.48P has also higher X-ray quantum efficiency per unit thickness [1] compared to those of some other wide bandgap X-ray photodetectors, e.g.…”

Al(Ga)InP-GaAs Photodiodes Tailored for Specific Wavelength Range

“…The GSMBE growth of relative thin AlInP layers for the tunnel junction or window/AR layer of tandem solar cells have also been reported (Li et al 1998). Recently, AlInP has been found with great potential to demonstrate very low dark current avalanche photodiodes (APD) (Ong et al 2011). However, comparing with the well-developed GaInP growth, the study of the growth process and doping characteristics of AlInP on GaAs remains quite insufficient, especially for the growth of thicker and composition diversified layers.…”