2003
DOI: 10.1143/jjap.42.2137
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Impact Ionization Model Using First Three Moments of Energy Distribution Function

Abstract: An improved analytical expression for the energy distribution function is proposed for its application to hot-carrier-related problems. The proposed energy distribution function represents an admixture of hot and cold electron populations with the cold electrons represented by a heated Maxwellian form. The inversely constructed energy distribution function agrees very well with the Monte Carlo data. The impact ionization generation rate is calculated using the Keldysh formula and shows an excellent agreement w… Show more

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“…This means that ͑18͒ cannot be used to represent the distribution function inside the drain region of MOS transistors where ␤ Ͼ 1 is observed in Monte Carlo simulations. One way to resolve this issue is to account for a superposition of a hot and cold distribution function explicitly 42 which, however, requires heuristic assumptions 42,52 and makes the closure relations quite complicated.…”
Section: ͑17͒mentioning
confidence: 99%
“…This means that ͑18͒ cannot be used to represent the distribution function inside the drain region of MOS transistors where ␤ Ͼ 1 is observed in Monte Carlo simulations. One way to resolve this issue is to account for a superposition of a hot and cold distribution function explicitly 42 which, however, requires heuristic assumptions 42,52 and makes the closure relations quite complicated.…”
Section: ͑17͒mentioning
confidence: 99%