IntroductionConjugated donor-acceptor (D-A) polymers have attracted increasing attention due to their easily modified structures, good solution rheology, semiconducting properties, and A novel building block, denoted as half-fused diketopyrrolopyrrole (DPP) (9-(3-octadecylhenicosyl)-8-(thiophen-2-yl)-7H-pyrrolo[3,4-a]thieno[3,2-g] indolizine-7,10(9H)-dione), in which one of the flanking thiophene units is fused to one of the DPP rings via a carbon-carbon double bond at the N-position is reported. The half-fused DPP is successfully utilized as an electron acceptor to prepare the conjugated donor-acceptor polymer PTFDFT, which exhibits ambipolar semiconducting behavior in ambient air. Theoretical calculations and absorption spectral studies show that the backbone of PTFDFT is more planar compared to the reference polymer with conventional DPP units. As a result, PTFDFT shows a narrow bandgap and low lowest unoccupied molecular orbital level. The more planar backbone with fewer side chains favors the dense packing of the polymer chains of PTFDFT with a short π-π stacking distance (3.49 Å). Grazing-incidence wide-angle X-ray scattering data further confirm the predominant edge-on packing mode of the PTFDFT polymer chains on the substrate. As expected, the PTFDFT thin film shows excellent ambipolar semiconducting properties under ambient conditions, reaching 2.23 and 1.08 cm 2 V −1 s −1 for the n-and p-channels, respectively. In addition, complementary-like inverter with gain value as high as 141 is successfully constructed using the PTFDFT thin film. mechanical properties. [1][2][3] Accordingly, they show promising applications in largearea, lightweight, and flexible electronic devices. [4,5] Among them, ambipolar conjugated D-A polymers, which are capable of transporting both electron and hole carriers, have drawn interest due to the fact that they facilitate the fabrication of complementary-like logic circuits using singlecomponent solution processing instead of selective deposition of p-and n-channel materials, which demand advanced patterning techniques. [6] In the pursuit of high ambipolar performance polymeric field-effect transistors (FETs), various conjugated D-A polymers have been developed and investigated. Different electron acceptors, including diketopyrrolopyrrole (DPP), [2e,7,8] isoindigo, [9] and naphthalene diimide, [10] have been introduced into conjugated D-A polymers to obtain ambipolar semiconductors. [2e,6-11] Among them, DPP-based polymers have been intensively investigated as semiconducting materials for FETs. [2e,6b,7,8,12,13] However, a large number of DPP-based polymers mainly show hole mobilities. This is because of the hindrance of electron injection due to the large gaps between lowest unoccupied molecular orbitals (LUMOs) (−3.2 to −3.6 eV) of DPP-based polymers and the electrode (normally gold) W F (work function ≈ 5.1 eV), while their highest occupied molecular orbitals (HOMOs) (−5.0 to −5.5 eV) were close to the W F of gold. [12] Therefore, lowering the LUMOs of DPP-based conjuga...