Impact of absorber layer thickness, defect density, and operating temperature on the performance of MAPbI3 solar cells based on ZnO electron transporting material

Ouslimane, Touria; Et-taya, Lhoussayne; Elmaimouni, L.; Benami, Abdellah

doi:10.1016/j.heliyon.2021.e06379

Cited by 176 publications

(75 citation statements)

References 29 publications

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“…On the other hand, we observe that, for N t took in the range [10 15 cm -3 , 10 19 cm -3 ], all the electrical parameters are greatly affected by the variation of the bulk defect density; there is an abrupt decrease of all these parameters (Figure 5). This decrease is reflected in the fact that the increase of these defects creates localized states in the bandgap [29,30]. These localized states influence the intrinsic Fermi level by creating tail states and by inducing additional charges, which are taken into account in the ρ def term of equation (1).…”

Section: Resultsmentioning

confidence: 99%

Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell

Abega

Ngoupo

Ndjaka

2021

International Journal of Photoenergy

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Numerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In the first step, the comparison between the J-V characteristics of simulation and experiment of the ultrathin a-Si:H-based solar cell is in agreement. Secondly, to explore the impact of certain properties of the solar cell, investigations focus on the study of the influence of the intrinsic layer and the buffer layer/absorber interface on the electrical parameters ( J SC , V OC , FF, and η ). The increase of the intrinsic layer thickness improves performance, while the bulk defect density of the intrinsic layer and the surface defect density of the buffer layer/ i -(a-Si:H) interface, respectively, in the ranges [109 cm-3, 1015 cm-3] and [1010 cm-2, 5 × 10 13 cm-2], do not affect the performance of the ultrathin a-Si:H-based solar cell. Analysis also shows that with approximately 1 μm thickness of the intrinsic layer, the optimum conversion efficiency is 12.71% ( J SC = 18.95 mA · c m − 2 , V OC = 0.973 V , and FF = 68.95 % ). This work presents a contribution to improving the performance of a-Si-based solar cells.

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Section: Resultsmentioning

confidence: 99%

Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell

Abega

Ngoupo

Ndjaka

2021

International Journal of Photoenergy

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“…Using the Cheung and Cheung method [39], the series resistance was obtained to be 4:0 × 10 4 Ω using equation (7).…”

Section: Elemental Composition Of the Solar Devicementioning

confidence: 99%

“…The third-generation solar cells are organic thin films with ease of processing AND low cost but improved efficiency. Different deposition techniques have been used for the deposition of heterojunction solar cells [3][4][5][6][7][8]. These deposition techniques are classified using various parameters of cost, simplicity among others [9].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of p-NiO/n-TiO2 Solar Device for Photovoltaic Application

Mouchou

Ukoba

Laseinde

et al. 2021

International Journal of Photoenergy

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Energy demand is increasing globally owing to population growth. Solar cell development has gained considerable attention because of its potential to provide everyone with sustainable, affordable, clean, and globally accessible energy. A heterojunction solar device for photovoltaic applications was developed in this study, using nickel oxide (NiO) as the p-type and titanium oxide (TiO2) as the n-type. The material chosen was motivated by the affordability, availability, and performance compared to existing silicon that is more efficient but less affordable and available. The TiO2 and NiO2 were synthesised and characterised before the deposition and characterisation of the solar cells. The characterisation was carried out using Fourier transform infrared spectroscopy (FTIR), Transmission Electron Microscopy (TEM), scanning electron microscopy (SEM), EDX, X-ray Diffraction (XRD), and a four-point probe. The deposition parameters were fine-tuned to achieve optimum optoelectronic properties for the solar device. The final device exhibited an open-circuit voltage of 370 mV, a current density of 1.7 mA, and solar cells efficiency of 3.7.

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“…On the other hand, Fig. 8-b indicates a decrease in duality factor and an increase in e ciency until reaching a new value η ZnO 30.41 % instead of 23 % illustrated in [14], [15] The thickness of the ZnO layer is varied between 0.001μm and 0.1μm while keeping the optimal values found to check the variation on the four variables studied. We notice in Fig.…”

Section: Cisselayer Optimizationmentioning

confidence: 99%

Improvement of CISSe / CdS / ZnO Structure Performance by SCAPS-1D.

Lachhab

Bliya

Ibrahmi

et al. 2021

Preprint

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This manuscript presents an optimization of the performances of the CISSe/CdS/ZnO structure. 12 tests were performed for each layer on thickness, gap energy and temperature using SCAPC-1D. Numerical data were compiled with the open circuit voltage, the short circuit density, the fill factor and the efficiency. The results obtained are confirmed with the measurements illustrated in the literature. The analyses indicate a progressive improvement in the performance of the structure for each test; an efficiency of 28.8 % was recorded for the CISSe layer while 30.07 % as an efficiency for CdS and 31.47 % for the absorbent layer. On the other hand, an open circuit voltage does not exceed 1.37V for the whole structure.Thus, these results are satisfied and encouraged.

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Impact of absorber layer thickness, defect density, and operating temperature on the performance of MAPbI3 solar cells based on ZnO electron transporting material

Cited by 176 publications

References 29 publications

Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell

Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell

Fabrication of p-NiO/n-TiO2 Solar Device for Photovoltaic Application

Improvement of CISSe / CdS / ZnO Structure Performance by SCAPS-1D.

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