Impact of AlInN Back-Barrier Over AlGaN/GaN MOS-HEMT With HfO₂ Dielectric Using Cubic Spline Interpolation Technique

Sandeep, V.; Pravin, J. Charles; Babu, A. Ramesh; Prajoon, P.

doi:10.1109/ted.2020.3010710

Cited by 25 publications

(7 citation statements)

References 22 publications

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“…23 CSI has also been carried out for deriving the DC characteristics of an HfO 2 -based MOS-HEMT device. 24 The value extraction methods were carried out in a very accurate manner.…”

Section: Csi Modelmentioning

confidence: 99%

“…Since the functional distribution is relatively smoother than other interpolation techniques, circuit designers employ this interpolation procedure to evaluate the relative error arising in the circuit implementation of SOI‐based MOSFETs 23 . CSI has also been carried out for deriving the DC characteristics of an HfO 2 ‐based MOS‐HEMT device 24 . The value extraction methods were carried out in a very accurate manner.…”

Section: Model Formulation and Validationmentioning

confidence: 99%

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Influence of Interface trap distributions over the device characteristics of AlGaN/GaN/AlInN MOS‐HEMT using Cubic Spline Interpolation technique

Viswanathan

Pravin

Arasamudi

et al. 2021

Int J Numerical Modelling

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Traps present at the interface of oxide and barrier layers influence the device's DC and RF parameters. An investigation is carried out on the distribution of interface traps present in the AlGaN/GaN/AlInN Metal Oxide Semiconductor‐High Electron Mobility Transistor (MOS‐HEMT) structures. By incorporating Hafnium Oxide (HfO2) as a dielectric layer, the DC and RF parameters like current drive and Power‐Added Efficiency (PAE) for the device are evaluated. The Capacitance‐Voltage (C–V) curves showed a shift in its values upon increase in trap density, which attributes to the position of fermi level once the threshold voltage is reached. A theoretical estimation of interface trap densities revealed distributions in the magnitude of 9.52 × 1012 cm−2 eV−1 near the mid‐gap and around 3.4 × 1013 cm−2 eV−1 at the Conduction Band (CB) edge. Carrier concentration at the Two‐Dimensional Electron Gas (2DEG) influences the distribution of traps at the interface, which in turn affects the on‐resistance of the device. Cubic Spline Interpolation (CSI) technique is employed here to model the device parameters precisely. The higk‐K dielectric material causes a high cut‐off of 201 GHz for the MOS‐HEMT. There is about 42% improvement in the PAE compared to the conventional MOS‐HEMT device. The comparably low trap density values (1012 cm−2 eV−1) than the conventional ones, prove the high quality gate passivation features of the HfO2/AlGaN interface and could serve as a potential candidate for high power and microwave applications.

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“…23 CSI has also been carried out for deriving the DC characteristics of an HfO 2 -based MOS-HEMT device. 24 The value extraction methods were carried out in a very accurate manner.…”

Section: Csi Modelmentioning

confidence: 99%

Section: Model Formulation and Validationmentioning

confidence: 99%

Influence of Interface trap distributions over the device characteristics of AlGaN/GaN/AlInN MOS‐HEMT using Cubic Spline Interpolation technique

Viswanathan

Pravin

Arasamudi

et al. 2021

Int J Numerical Modelling

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“…AlGaN/GaN-based heterostructures provide 2DEG (2-dimensional electron Gas) at AlGaN-barrier and GaN-Channel layer interface, which provides higher carrier mobility and current density generation of Spontaneous and Piezoelectric Polarizations. Recently, AlGaN/GaN based metal-oxidesemiconductor MOSHEMT with an insulating dielectric oxide layer (Al2O3) primarily targeted the RF power applications due to its low gate leakage current and improved drain and threshold voltage [8][9][10][11][12]. But HEMT and MOSHEMT based devices suffer from high contact and high on-resistance due to metallic ohmic contacts and significant source/drain distance.…”

Section: Introductionmentioning

confidence: 99%

RF/Analog and Linearity Performance Evaluation of Lattice-matched Ultra-thin AlGaN/GaN Gate Recessed MOSHEMT with Silicon Substrate

Khan

Jena

Routray

et al. 2022

Silicon

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In this article, the Authors have demonstrated and analyzed various analog/RF and linearity performance of a AlGaN/GaN gate recessed MOSHEMT (GR-MOSHEMT) grown on a Si substrate with mathematical modeling based TCAD simulation. Specifically, a Al2O3 dielectric GR-MOSHEMT has shown tremendous potential in terms of AC/DC figure of merits (FOM's) such as low leakage current, high transconductance, high Ion/Ioff current ratio and excellent linear properties corresponding to conventional AlGaN/GaN HEMT and MOSHEMT. The figure-of-merit metrics such as VIP2, VIP3, IIP3 and IDM3 are performed for different drain to source voltages (VDS) of 2.5V, 5V and 10V. All the modeling and simulation results are generated by Commercial Silvaco TCAD and found to be satisfactory in terms of high frequency and power applications. The present GR-MOSHEMT device shows a superior performance with a threshold voltage of 0.5V, Current density of 888 mA, high transconductance of 225 mS/mm and high unit gain cut-off frequency of 0.91GHz. The results of the developed AlGaN/GaN GR-MOSHEMT considerably improves the device performance and also suitable for high power distortion less RF applications.

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“…LGAN/GAN high electron mobility transistors (HEMTs) are potential candidate devices to construct radio frequency (RF) electronic circuits for future 5G communications, defense, and space applications [1], [2]. Addition of a gate dielectric to realize AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOS-HEMTs) is shown to further improve the gain and noise figure of such devices when operated at high frequency [3], [4]. AlGaN/GaN MOS-HEMTs also offer a lower subthreshold leakage current, better stability, and reduced current-collapse compared to commonly used AlGaN/GaN HEMTs [5]- [7].…”

Section: Introductionmentioning

confidence: 99%

Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs

Jadhav

Ozawa

Baratov

et al. 2021

IEEE J. Electron Devices Soc.

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Traditional lumped small signal equivalent circuit models of AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOS-HEMTs) are made up of constant valued circuit elements. Such models are unable to capture the high frequency behavior (above 20 GHz) of the device. In this work, a modified small signal equivalent circuit model of AlGaN/GaN MOS-HEMTs is presented. The key feature of the proposed model is that the values of the different circuit elements in the model are considered to be frequency dependent in nature and not constants. The frequency dependent value of each circuit element is mathematically represented using polynomial functions where the coefficients of the functions are determined via a least-square curve fitting approach. This frequency dependent attribute of the circuit element values ensures that the proposed model is very accurate at high frequencies without sacrificing the compactness of the model topology. The accuracy of the proposed model has been verified up to 50 GHz using experimentally measured Y-parameters of AlGaN/GaN MOS-HEMTs having a different gate dielectric and gate length.

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Impact of AlInN Back-Barrier Over AlGaN/GaN MOS-HEMT With HfO₂ Dielectric Using Cubic Spline Interpolation Technique

Cited by 25 publications

References 22 publications

Influence of Interface trap distributions over the device characteristics of AlGaN/GaN/AlInN MOS‐HEMT using Cubic Spline Interpolation technique

Influence of Interface trap distributions over the device characteristics of AlGaN/GaN/AlInN MOS‐HEMT using Cubic Spline Interpolation technique

RF/Analog and Linearity Performance Evaluation of Lattice-matched Ultra-thin AlGaN/GaN Gate Recessed MOSHEMT with Silicon Substrate

Generalized Frequency Dependent Small Signal Model for High Frequency Analysis of AlGaN/GaN MOS-HEMTs

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