Organic solar cells (OSCs) have recently achieved power conversion efficiencies (PCEs) of over 16%. However, there still exist large losses in photocurrent and/or voltage in state-of-the-art OSCs, making the PCEs still far below those of inorganic counterparts. Here, the factors and electronic processes for photocurrent and voltage losses are identified and discussed in the framework of device physics and photophysics. To simultaneously obtain both high photocurrent density and low voltage loss toward 20% PCEs, it is crucial to suppress the non-radiative (NR) recombination of the lowest charge-transfer (CT) state at the donor-acceptor interface. In principle, theoretical simulations can provide molecular insight into the origin of these losses, which is essential to guide material design. In particular, the authors highlight the importance of the local interface morphologies and the vibronic couplings on suppressing the NR decay of the lowest CT state according to recent theoretical studies.
(1 of 17)www.advancedsciencenews.com www.advtheorysimul.com as A, has achieved a high J SC of 25 mA cm −2 . [5] Nevertheless, the value of J SC /J SC,SQ for the E g of 1.33 eV is only 0.71, implying that even in the best OSCs, the photocurrent loss is still non-negligible. Now we turn to the loss in open-circuit voltage. The voltage loss ( V OC ) or energy loss (E los s , i.e., q V OC ) is defined asEven in the ideal SQ limit, the V OC is inevitable. [9] The V OC can be as low as 0.3 V in GaAs and slightly higher (0.4-0.55 V) in c-Si and perovskite solar cells, while the V OC in high-efficiency OSCs is usually around 0.6 V or larger. [10] For example, the best fullerene-based OSCs based on PffBT4T-C 9 C 13 :PC 71 BM have a large V OC of 0.87 V for an E g of 1.65 eV, despite of a high J SC /J SC,SQ value of 0.82. [11] In order to improve the PCE for a given E g , it is important to minimize V OC without sacrificing the generation of photocurrent. [12,13] Here, the PCE versus E g and V OC is calculated by Equations (1), (3), and (6), based on two reliable assumptions: i) the E QE P V is set to a fixed value of 85% when E ≥ E g , even though the highest value has reached 90%, [14] because it is very difficult to obtain the maximum value over the whole range in real systems, and ii) the FF is set to 80%, since the highest FF of 80.79% has been reported, [15] which is comparable to those of c-Si and GaAs solar cells (80-86%). [8] Hence, a low V OC of, for example, 0.45 V can produce PCEs over 20% at a wide E g range of 1.1-1.6 eV (Figure 1b). This suggests that a PCE of 20% should be a reasonable target for single-junction OSCs, providing a large area to explore in the future. To achieve this target, as a preliminary step, the origin of photocurrent and voltage losses in OSCs must be identified.In the following, we first describe the optical and electronic processes in OSCs and especially, point out the adverse factors or processes that can result in the photocurrent loss. Second, we