Impact of annealing on the growth dynamics of indium sulphide buffer layers

Ahmed, Shafiq; Padha, Naresh; Banotra, Arun; Khosla, Ajit

doi:10.1016/j.jmrt.2022.09.094

Cited by 5 publications

(2 citation statements)

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“…Through X-ray diffraction (XRD) characterization, we found that the as-deposited film is amorphous (Figure 2a). [12,17] To identify the phase of the synthesized materials, we collected the powder generated during the deposition process. Diffraction peaks belonging to In 2 S 3 were detected at 27.51°, 43.76°, and 47.91°(Figure S1, Supporting Information), which correspond to crystal planes of (311), (511), and (440) (JCPDS no.…”

Section: Resultsmentioning

confidence: 99%

“…Furthermore, the amorphous properties caused by low-temperature annealing generates negative effect on the conductivity of the film and the quality of the heterojunction. [12,17] To cope with this problem, we applied ZnCl 2 solution to treat In 2 S 3 film, and prepared ZnCl 2 -modified In 2 S 3 buffer layer. Subsequently, we deposited the Sb 2 Se 3 light absorber layer through thermal evaporation method, and fabricated superstrate-type Sb 2 Se 3 solar cells with using In 2 S 3 as a buffer layer.…”

Section: Introductionmentioning

confidence: 99%

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Zinc Chloride‐Treated Indium Sulfide as Buffer Layer for Cd‐Free Antimony Selenide Solar Cells

et al. 2023

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In2S3, as a promising environmentally benign semiconductor, is used as a buffer layer in thin‐film solar cells due to its high electron mobility, low toxicity, and excellent thermal and chemical stability. The preparation of a high‐quality In2S3 film is crucial for the improvement of its carrier extraction ability and subsequent deposition of absorber layers. Herein, it is demonstrated for the first time that a posttreatment of In2S3 film with ZnCl2 solution is able to serve as buffer layer for constructing superstrate Sb2Se3 solar cells. The posttreatment with ZnCl2 not only prevents In2S3 from excessive oxidation during annealing process, but also facilitates the growth of (hk1) orientation of Sb2Se3, thereby improving the interfacial contact of In2S3/Sb2Se3. The improved heterojunction quality suppresses the carrier recombination at the interface, and enhances the charge extraction ability of In2S3. As a result, the power conversion efficiency of Sb2Se3 solar cell increases from 2.63% to 5.00%. Herein, a facile and effective strategy is provided for the application of In2S3 as the buffer layer in inorganic chalcogenide solar cells.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%