Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf0.5Zr0.5O2 and Si:HfO2-based MFM capacitors

François, T.; Grenouillet, L.; Coignus, J.; Vaxelaire, Nicolas; Carabasse, C.; Aussenac, F.; Chevalliez, S.; Slesazeck, Stefan; Richter, Claudia; Chiquet, P.; Bocquet, Marc; Schroeder, Uwe; Mikolajick, Thomas; Gaillard, F.; Nowak, E.

doi:10.1063/5.0035650

Cited by 29 publications

(10 citation statements)

References 23 publications

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“…At higher temperatures, a reduced field cycling endurance (e.g. of at least one decade at 75°C [11]) can be hindered by material improvements such as replacing HSO for Hf0.5Zr0.5O2 as in [12]. Overall, capacitor area scaling down to the target capacitor size is expected to be non-detrimental to electric field cycling reliability.…”

Section: Wake-up and Field Cycling Endurancementioning

confidence: 99%

BEOL Integrated Ferroelectric HfO₂-Based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions

Alcala

Materano

Lomenzo

et al. 2022

IEEE J. Electron Devices Soc.

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Si doped HfO2 based ferroelectric capacitors integrated into Back-End-Of-Line (BEOL) 130 nm CMOS technology were investigated in regard to critical reliability parameters for their implementation in non-volatile one-transistor one-capacitor ferroelectric random-access memory applications. The assessed reliability parameters are electric field, capacitor area, and temperature and are evaluated on single and parallel structured capacitors to understand their respective impact on wake-up, fatigue, imprint, and retention.

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Section: Wake-up and Field Cycling Endurancementioning

confidence: 99%

BEOL Integrated Ferroelectric HfO₂-Based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions

Alcala

Materano

Lomenzo

et al. 2022

IEEE J. Electron Devices Soc.

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“…These measures enable a reduced thermal budget to crystallize the HZO, necessary for the successful integration of ferroelectric HZO on InAs. However, despite these measures, the endurance of InAs/HZO ferroelectric capacitors is at this point much lower than its MIM counterparts (10 8 –10 10 cycles), [ 44 ,‐ 46 ] highlighting the necessity to minimize the thermal budget for HZO integration onto the thermally sensitive III–V semiconductors. Although device scaling down to sub‐micron‐sized devices has proved to significantly improve the endurance properties, [ 46 ] our results here indicate that research into ns‐annealing [ 37 ] or annealing‐free approaches [ 47 ] may be necessary to truly enable high‐performance III–V‐based ferroelectric devices.…”

Section: Discussionmentioning

confidence: 99%

Improved Endurance of Ferroelectric Hf_xZr_1–xO₂ Integrated on InAs Using Millisecond Annealing

Athle

Blom

Irish

et al. 2022

Adv Materials Inter

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Ferroelectric HfxZr1–xO2 (HZO) is typically achieved by crystallization of an amorphous thin film via rapid thermal processing (RTP) at time scales of seconds to minutes. For integration on III–V semiconductors, this approach can severely degrade the sensitive HZO/III–V interface. To evaluate whether a reduced thermal budget can improve the interface quality, millisecond duration thermal anneals are utilized using a flash lamp annealer (FLA) on HZO/InAs capacitors. Through thorough electrical characterization such as polarization hysteresis, endurance, and capacitance‐voltage measurements, as well as synchrotron‐based chemical interface characterization, the FLA and RTP treatments are compared and the FLA results are found in lower interface defect density and higher endurance, but also have generally lower remanent polarization (Pr) compared to RTP. Additionally, ways to achieve high Pr and low interface defect density using multiple lower energy flashes, as well as by pre‐crystallization during the ALD growth step are investigated. Using FLA, Pr exceeding 20 µC cm−2 is achieved, with extended endurance properties compared to RTP treatment and a considerably decreased defect density, indicative of a higher quality HZO/InAs interface. This work presents valuable insight into the successful integration of ferroelectric HZO on low thermal budget III–V semiconductors.

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“…9,12 It has been reported that the cycle-tobreakdown of FE-HfO 2 capacitors is further improved by a factor of 10 2 to 10 4 by reducing the capacitor area by 4 orders of magnitude. 41,42 This is because dielectric breakdown is caused by the formation of a conduction path, which has a lower probability of occurring in a smaller area. 43 Therefore, the cycle-to-breakdown of 10 12 cycles at 200 kHz or 10 14 cycles at 20 MHz found in this study can be considered a lower limit of cycle-to-breakdown in smaller capacitors.…”

Section: Low Operating Voltagementioning

confidence: 99%

Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf_0.5Zr_0.5O₂ Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory

Toprasertpong

Tahara

Hikosaka

et al. 2022

ACS Appl. Mater. Interfaces

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The comparatively high coercive field in Hf0.5Zr0.5O2 (HZO) and other HfO2-based ferroelectric thin films leads to two critical challenges for their application in embedded ferroelectric memory: high operating voltage due to a large thickness-field product and poor endurance due to the high operating field close to the breakdown field. In this study, we demonstrate that the thickness scaling of ferroelectric HZO down to 4 nm is a promising approach to overcome these challenges. As the coercive voltage scales down almost linearly with the film thickness, the operating voltage of 4 nm HZO is reduced to 0.6 V for one-shot operation and 1.2 V for stable memory operation, which is in the voltage range compatible with scaled silicon technologies. Furthermore, it is found that the breakdown field is substantially improved in thinner HZO since the breakdown mechanism is dominated by the stress voltage, not the stress field, resulting in improved cycle-to-breakdown by more than 4 orders of magnitude when thinning from 9.5 to 4 nm. We identify two concerns accompanying thickness scaling: the increase in crystallization temperature and the pinched hysteresis behavior, which can be addressed by carefully preparing temperature-thickness mapping and applying strong-field wake-up cycling, respectively. Our optimal 4 nm-thick HZO ferroelectric capacitor exhibits an operating voltage of 1.2 V with over 10 year data retention and 1012 endurance cycles at 100 kHz, which can be further improved to more than 1014 with a smaller capacitor size and higher operating frequency.

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Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf0.5Zr0.5O2 and Si:HfO2-based MFM capacitors

Cited by 29 publications

References 23 publications

BEOL Integrated Ferroelectric HfO₂-Based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions

BEOL Integrated Ferroelectric HfO₂-Based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions

Improved Endurance of Ferroelectric Hf_xZr_1–xO₂ Integrated on InAs Using Millisecond Annealing

Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf_0.5Zr_0.5O₂ Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory

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Impact of area scaling on the ferroelectric properties of back-end of line compatible Hf0.5Zr0.5O2 and Si:HfO2-based MFM capacitors

Cited by 29 publications

References 23 publications

BEOL Integrated Ferroelectric HfO₂-Based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions

BEOL Integrated Ferroelectric HfO₂-Based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions

Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing

Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory

Contact Info

Product

Resources

About

Improved Endurance of Ferroelectric Hf_xZr_1–xO₂ Integrated on InAs Using Millisecond Annealing

Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf_0.5Zr_0.5O₂ Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory