Impact of attenuated PSM repair for 130-nm polygate lithography process

Shi, Xuelong; Hsu, Stephen; Socha, Robert; Chen, J. Fung; Cheng, Andy S. K.; Su, Clyde; Cheng, Jackie; Chen, Andy; Lin, Henry; Wang, David; Chen, Dick; Lin, Arthur; Conley, Will; Metzger, Dan; Imamura, P.H.; Sherrill, Micheal J.

doi:10.1117/12.436797

Cited by 2 publications

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“…In this paper, we will obtain the diffusion length through the measurement of the mask error factor (MEF). The mask error factor (MEF) or the mask error enhancement factor (MEEF) [1][2][3][4][5][6][7][8] quantifies the impact of reticle CD errors on the CD of the corresponding printed feature:…”

Section: Simulation Methodologymentioning

confidence: 99%

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A systematic study of the dip in the CD through-pitch curve for low-k1 processes

Zhu

Wu²,

Jiang³

et al. 2006

SPIE Proceedings

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Optical proximity correction has been widely used to correct line width variation in various different environments. The most important correction will be the CD through-pitch variation. For deep-UV (DUV) photo processes, it is observed that the CD will have a reduced trend at certain intermediate pitch range around 1.1 to 1.4 wavelength / NA (numerical aperture), also called "forbidden pitch". The process windows within this pitch range are small. In this case, even though we can use OPC to print the CD correctly, the process window can still be limited, which can generate a bottleneck for the entire process. In order to make OPC more effective, we find it necessary to be able to design an optimized process with enough process windows for all pitches. Although this may mean that we need to map out the entire parameter space spanned by relatively unknown parameters in resist, exposure tool quality, mask tolerance, etc, recent developments in the understanding of the effect of illumination selection, scanner lens aberration, and resist blur have provided us with new hints in realizing it. Such new developments include the optimization of off-axis illumination (OAI) condition, the characterization of the effect of lens aberration, and the selection of resists with appropriate effective acid diffusion length. We have studied the effect of illumination, lens aberration, and resist diffusion to the CD and process window at the above described intermediate pitch range both in theory and experiment. We have found that the effective resist diffusion, whose range is from 10nm to 50nm, can affect the process window at the intermediate pitch range, to as much as a few tens of nanometers. We will show that, in general, longer diffusion correlates to a deeper "dip". However, according to the experience in the use of photo resists, short diffusion length can also affect process window through the reduction of depth of focus. Therefore it is important to find an optimized resist diffusion length under various ground-rule and illumination conditions. But there has been no studies reported so far as to how much diffusion that can be tolerated for a given process at the intermediate pitch range. We have also performed experiments on the effect of the scanner lens aberration, we found that the lens aberration, which may be largely ignored in the past, may affect the process performance, causing mask error factor to rise significantly. In this paper, we will present the result of our experiments and theoretical investigations in how much resist diffusion and lens wave front error that can be tolerated for a given photolithographic process with certain CD tolerance. Insight will be provided for the choice of illumination conditions, resolution enhancement techniques, and the resist in realizing the best CD through-pitch performance under any given ground-rule condition.

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Section: Simulation Methodologymentioning

confidence: 99%

“…We will also show the data obtained from two scanners with one of them having some residue spherical aberration. In the analysis, we use mask error factor (MEF) [1][2][3][4][5][6][7][8] to define the overall quality of the imaging capability of the exposure system.…”

Section: Introductionmentioning

confidence: 99%

A systematic study of the dip in the CD through-pitch curve for low-k1 processes

Zhu

Wu²,

Jiang³

et al. 2006

SPIE Proceedings

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“…As far as mask IQC point of view, it's getting tough and risky to perform the judgement on repaired defect because reticle repairs were found to easily pass IQC reticle inspection. In addition, the side effects of reticle repairs including Ga+ stain, phase error and transmission loss on AttPSM will significantly impact the final wafer printing results at low k1 lithography 2,3,4 .…”

Section: Introductionmentioning

confidence: 99%

Characterization of repairs to KrF 300mm wafer printability for 0.13μm design rule with attenuated phase-shifting mask

et al. 2002

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For sub-0.13um lithography, attenuated phase shifting mask (AttPSM) with optical proximity correction (OPC) is reported as one of the potential methods to achieve manufacturable process by using 248nm exposure wavelength. Unfortunately, the low-k1 imaging process in 130nm lithography imposes much more stringent requirements on defect repair, especially on AttPSM reticle. Therefore, the imperfect repairs will have a significant impact on wafer process window due to quartz damage and phase distortion caused by Ga+ ion stain removal and added carbon material, respectively.In this paper, we have prepared AttPSM test masks having programmed defects with various opaque defects. Each defect area was inspected with KLA-Tencor's SLF27 inspection system to acquire defect coordinates and image, simulated with AIMS to assess the intensity and transmission loss induced by repair process. All of masks were made by DuPont Photomasks Taiwan (DPT) by using the Jbx9000MV2 E-beam writer and dry Chrome etch process. All lithographic experiments were performed on 300mm wafer using high NA ASML AT750S scanner and high contrast CAR resist. In this study, we have focused on the impact of quartz damage and phase error on wafer process window by comparing the wafer CD and pattern profile through focus. In order to establish a efficient way to perform effective judgement on repair defect between mask shop and wafer fab, both AIMS and wafer results will be compared and correlated.

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Impact of attenuated PSM repair for 130-nm polygate lithography process

Cited by 2 publications

References 0 publications

A systematic study of the dip in the CD through-pitch curve for low-k1 processes

A systematic study of the dip in the CD through-pitch curve for low-k1 processes

Characterization of repairs to KrF 300mm wafer printability for 0.13μm design rule with attenuated phase-shifting mask

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